Professor Jörg Schulze will present his invited paper, „(Si)GeSn Nanostructures for Optoelectronic Device Applications“ at MEET conference, on Thursday, June 2, at 9.00 am, Bellavista Hall, Grand hotel Adriatic.

A key challenge to obtain a convergence of classical Si-based microelectronics and optoelectronics is the manufacturing of photonic integrated circuits integrable into classical Si-based integrated circuits. This integration would be greatly enhanced if similar facilities and technologies can be used. Therefore one approach is the development of optoelectronic components and devices made from group-IV-based materials as SiGeSn.

High speed photonic detection by Ge/Si heterojunction devices was demonstrated in the last decades with potential to be shifted to more than 100 GHz. In the last years small area absorption modulators based on electric field modification of material properties (quantum-confined Stark effect modulators or Franz Keldysh effect modulators) were also developed. However, the realization of light emitters with a Si base is still challenging due to the nature of the indirect semiconductors Si, SiGe and Ge. However, recent successes on strained and unstrained Ge light emitting diodes and the manufacturing of SiGeSn alloys anticipate that direct band gap can be obtained with these materials are holding the promise of integrable group-IV-based light emitters

Professor Jörg Schulze studied experimental physics at the TU Braunschweig, Germany. In 2000 he received the Ph.D. degree (Dr.-Ing.) in EE from the EE&IT Faculty of the University of the German Federal Armed Forces Munich. From the same faculty he received in 2004 his post-doctoral degree (Habilitation). He was active as Senior Consultant for Technical Risk Management and as Head of Competence Field "Robust Design Optimization" in Siemens Corporate Technology (2005-2008). Since 2008 he is working at the University of Stuttgart, Germany, as Professor of EE and Head of the Institute of Semiconductor Engineering. His main interest is directed to group-IV-based epitaxy, nano-electronics, photonics, quantum electronics and spintronics.