Hybrid Event

Event program

Thursday, 6/5/2025 9:00 AM - 1:00 PM, Bellavista, Grand hotel Adriatic, Opatija 9:00 AM - 1:00 PM Papers  1. A. Hartmann (Friedrich-Alexander Universität (FAU), Erlangen, Germany), N. Boettcher (Fraunhofer IISB, Erlangen, Germany) A Novel Design Variation of a Monolithically Integrated SiC Circuit Breaker  This paper provides a thorough design study of a two-pole solid-state circuit breaker (SSCB) device for 900 V DC applications supported by quasi‐static two-dimensional TCAD simulations. Building on the work of Boettcher et al. using 4H‐SiC JFET technology with monolithic integration of an n‐channel JFET (nJFET) and a p‐channel JFET (pJFET), the proposed design replaces the horizontal nJFET with a vertical structure [1-3]. This change eliminates the need for a second epitaxial layer and reduces the number of ion implantation steps from six to three, thereby simplifying the manufacturing process. Numerical TCAD simulations reveal that the novel SSCB design enables independent tuning of threshold and breakdown voltage. In the pJFET, adjustments in channel depth and doping concentration allow the blocking voltage window to be enhanced from 450 V to over 800 V, while maintaining a breakdown voltage of approx. 900 V. These findings indicate that the proposed SSCB design offers improved performance and fabrication efficiency for high voltage DC applications. 2. R. Kammel, J. Dick (Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany), A. May, M. Rommel (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany), J. Schulze (Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany) 600°C Operation of a LDMOS Integrated on the 4H-SiC CMOS Platform  Laterally diffused metal oxide semiconductor transistors (LDMOS) play an important role for the integration of power electronics in integrated circuits, due to their lateral structure matching the CMOS design architecture. This work demonstrates the successful fabrication of LDMOS transistors on 4H-SiC and their operation at temperatures up to 600 °C. That capability allows power devices to operate at higher temperatures beyond the limits of Silicon MOSFETs, eliminating the need for complex cooling systems for the integrated circuit. In this work, low threshold voltage shift, especially for operation temperatures above 300 °C, temperature dependence of the on-state resistance and the saturation current, as well as permanent degradation processes are discussed. 3. B. Schwemmer, J. Dick (Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany), A. May (Fraunhofer Institute for Integrated Systems and Device Technology IISB, Erlangen, Germany), J. Schulze (Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany) Empirical Modelling of Tunneling Processes in 4H-SiC Gated pin-Diodes  With lateral 4H-SiC gated pin-diodes, the tunneling behavior at the interface of a highly p-type doped anode and a gate-induced n-channel within the i-region can be controlled via the reverse voltage and the gate voltage. In this paper, the dependence on both parameters is modelled empirically based on measurements of fabricated devices. The model used in this work is based on Zener-tunneling through a triangular barrier and the maximum electric field in a pn-junction assuming the depletion approximation. The influence on the tunneling current of varying reverse voltages is weaker than predicted by the employed theory, but an empirically updated model, where the expression for the electric field is altered, can fit the characteristic well. The dependence on the gate voltage does not match the original assumptions, but a further modified empiric model on the same theoretical foundation is able to fit the measured behavior as well. 4. S. Ultsch, J. Dick, J. Schwarz, J. Schulze (Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany) Electro Luminescent behavior of Defects in 4H-SiC Light Emitting Diodes  In this work, electroluminescence in pn-junctions with various geometries in 4H-SiC is investigated. Under forward bias, all devices exhibit the Nitrogen donor to valence band transition, emitting light at wavelengths of 391 nm and 400 nm. Additionally, light with a peak wavelength of 476 nm is emitted, corresponding to the Nitrogen donor to D₁ defect transition. Devices with significant areas of Aluminum and Nitrogen co-doping in their pn-junctions, features another peak at 496 nm, resulting from the transition between the Nitrogen donor state and the Al₂ acceptor state, located deep within the bandgap. The peaks of the latter transition display a blue shift due to the Stark effect. At elevated device temperatures a red shift of all peaks is observed due to self-heating. The spectra obtained from the wafer's backside are compared with the absorption characteristics of the substrate, revealing that light stemming from the Nitrogen donor to D₁ defect transition is absorbed dominantly by the substrate. 5. J. Wimmer, J. Dick, J. Schulze (Chair of Electron Devices, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erlangen, Germany) Fabrication and Electrical Characterization of Pure Boron on 4H-SiC Junctions  In this work, the Boron-on-Silicon junction concept, which exhibits bipolar diode behavior, was transferred to Silicon Carbide (SiC). We focus on the electrical behavior of a 3 nm Boron layer on the hexagonal (0001) interface of 4H-SiC. The layer was evaporated at a substrate temperature of 300°C and subsequently encapsulated by an Aluminum layer. The as-deposited Boron-on-4H-SiC diodes show Schottky-behavior and a workfunction of 3.89 eV for Boron. Subsequent heat treatment above 500°C revealed characteristics comparable to merged-pin-Schottky-diodes (MPS), which hints towards partial reconfiguration of the Boron-on-4H-SiC interface and bipolar behavior. 6. A. Tabaković, F. Bogdanović, L. Marković (Fakultet elektrotehnike i računarstva, Zagreb, Croatia), J. Žilak (Ericsson Nikola Tesla, Zagreb, Croatia), M. Koričić, T. Suligoj (Fakultet elektrotehnike i računarstva, Zagreb, Croatia) Modeling of Silicon Bipolar Transistor's Current Gain at Cryogenic Temperatures down to 40 K  This paper presents a modeling approach for predicting the DC current gain of Silicon Bipolar Junction Transistors (Si BJT) at temperatures between 40 K and 300 K using a TCAD environment. The study demonstrates that accurate modeling cannot be achieved solely by adjusting the technological parameters but requires modifications to physical models, particularly bandgap narrowing (BGN) and Shockley–Read–Hall (SRH) recombination. A reduced emitter doping concentration, which decreases BGN effects, is associated with higher DC current gain. Also, a lower base doping is shown to enhance DC current gain below 100 K due to reduced dopant ionization. However, these modifications must be carefully optimized to prevent base punchthrough. Standard Bennett-Wilson BGN model was modified to align with the experimentally determined temperature dependence of DC current gain below room temperature. Carrier lifetime adjustments in the SRH recombination model improved the agreement between simulations and measurements at 300 K. The model was validated by comparing simulated DC current gain values from 300 K to 40 K with measurements of the Horizontal Current Bipolar Transistor (HCBT), which recently demonstrated DC current gain recovery at cryogenic temperatures. The proposed modeling approach significantly improves the accuracy of HCBT DC current gain predictions compared to previous reports. 7. A. Akšamović (University of Sarajevo - Faculty of Electrical Engineering, Sarajevo, Bosnia and Herzegovina), S. Odžak (University of Sarajevo - Faculty of Science, Sarajevo, Bosnia and Herzegovina) Estimation of Single-Diode Model Parameters of Photovoltaic Panels Using Four Points on the I − V Curve  The single-diode model equation of a photovoltaic (PV) panel is a nonlinear equation that relates the current and voltage of the panel. During operation, the PV panel can be at any point along the I − V characteristic defined by this equation. Catalogue data generally provide current and voltage values at three points: short-circuit, opencircuit, and maximum power under standard test conditions (STC) and nominal operating conditions (NOCT). For the purpose of PV plant modelling, the parameters Iph, I0, Vt, Rs, and Rsh are typically estimated from catalogue data using various methods. The estimated parameters enable the determination of an I − V curve that typically aligns well with measurements under real-world conditions, provided the panels meet their specified characteristics. However, due to usage or improper storage, panels may degrade, leading to changes in these parameters and deviations from those estimated from catalogue data. Existing methods for capturing I − V curves often involve measuring currentvoltage pairs at numerous points, making them slow and hardware-intensive. This paper investigates the estimation of real panel parameters using current and voltage at just four points on the I −V curve. The results show good agreement between the estimated parameters and the I − V curves derived from them. 8. M. Marušić, D. Novaković, I. Berdalović, T. Suligoj (Faculty of Electrical Engineering and Computing, Zagreb, Croatia) Impact of AlGaN and InAlN Barrier Layer Materials on Double-Heterostructure GaN HEMT's Conduction Properties  Gallium-nitride (GaN) based high electron mobility transistors (HEMTs) are widely used in RF applications due to their high breakdown voltage, a consequence of GaN’s wide bandgap. This paper investigates a double-heterostructure HEMT with an AlGaN barrier layer, where a two-dimensional electron gas (2DEG) forms due to piezoelectric and spontaneous polarization. We present the dependence of 2DEG density on aluminum content and the temperature dependence of carrier mobility for an Al0.4Ga0.6N barrier layer. The momentum relaxation time approximation is used for numerical calculations of low-field electron mobility, accounting for all relevant scattering mechanisms. Interface roughness (IFR) scattering dominates at low temperatures, while polar optical phonon (POP) scattering primarily determines total mobility at room temperature and above. Furthermore, the barrier layer is modified to In0.14Al0.86N, where the 2DEG forms mostly due to spontaneous polarization. The dependence of 2DEG density on indium content in the barrier layer reveals an increase in 2DEG density, leading to lower on-state resistance. Notable improvements in transconductance are also observed, with a third double heterostructure featuring a thinner In0.14Al0.86N barrier simulated alongside the previous two structures of equal dimensions. This provides guidelines for optimizing GaN-based HEMTs to achieve minimal on-state resistance and high transconductance. 9. M. Matić, A. Miljavac (University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, Croatia), V. Sharma (Department of Mechanical and Materials Engineering, University of Turku, Finland, Turku, Finland), M. Poljak (University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, Croatia) Resistivity Modeling of Copper Nanowires With Sub-100 nm Diameter  The high conductivity of copper nanowires (CuNWs) with a diameter of less than 100 nm makes them promising candidates for various applications, including interconnects for nanoelectronics and flexible transparent conductive surfaces (TCS). One of the most important parameters is the resistivity of CuNWs, which is mainly determined by the size and structural imperfections such as surface and grain boundary scattering. Compact and exact models are used that accurately describe the resistivity for sub-100 nm-wide CuNWs where the mean free path is comparable to the critical dimension of the nanowire. We analyze the resistivity as a function of diameter and various scattering parameters, such as specularity, reflectivity and mean grain size. We found that the grain boundary effect dominantly determines the resistivity while surface scattering acts as correction factor. We show that the expected resistivity is lower than 10×10−8 Ωm, potentially indicating good applicability for high-conductivity TCSs even for structurally imperfect CuNWs. 10. T. Vukadin, M. Matić, M. Poljak (Sveučilište u Zagrebu, Fakultet elektrotehnike i računarstva, Zagreb, Croatia) Electronic Properties and Ballistic Transport in the 1D van der Waals Material Si2Br4  Gate-all-around field-effect transistors (GAA-FETs) are emerging as the dominant transistor architecture in the semiconductor industry. At sub-10 nm technology nodes, conventional channel materials often suffer from atomic-scale imperfections, leading to a decline in carrier transport properties and transistor performance. One-dimensional (1D) van der Waals (vdW) materials have recently gained attention as promising alternatives to conventional semiconductors due to their unique electronic and transport features and pristine atomically perfect surfaces free of dangling bonds. Within the bulk versions of these materials, individual atomic chains are held together by weak van der Waals forces, allowing them to be exfoliated into 1D structures. In this study, we explore the electronic and transport properties of the 1D vdW material Si₂Br₄ with the goal of assessing its feasibility as a channel material in a circular GAA FET device with a 15 nm gate length. 11. M. Poljak (Faculty of Electrical Engineering and Computing, Zagreb, Croatia) Probing the Design Space of InSb Topological Superconductor Nanowires for the Realization of Majorana Zero Modes  Non-Abelian anyons such as Majorana zero modes (MZMs) have the potential to enable fault-tolerant quantum computing through topological protection. Experimentally reported InSb topological superconductor nanowires (TSNW) are investigated theoretically and numerically to evaluate their suitability to host MZMs. We employ eigenspectra analysis and quantum transport based on the non-equilibrium Green’s function (NEGF) formalism to investigate the eigenenergies, Majorana wave functions via local density of states, transmission spectra for Andreev processes, and zero-bias conductance peaks (ZBCPs) in InSb TSNWs. For 1.6 μm- and 2.2 μm-long InSb TSNWs we demonstrate the existence of a small optimum design space defined by the applied magnetic field and electrochemical potential, which leads to clear ZBCP signatures with a Majorana localization length of ~340 nm. Thursday, 6/5/2025 3:00 PM - 7:00 PM, Bellavista, Grand hotel Adriatic, Opatija 3:00 PM - 7:00 PM Papers  1. K. Šolaja, R. Blečić, A. Broznić (Rimac Technology d.o.o., Sv. Nedelja, Croatia) Design and Analysis of Power Supply Input EMC/EMI filter for Automotive Electronic Control Units  Proper power supply filtering is a key requisite in meeting the EMC requirements set by international bodies. Traditional development processes rely upon measurements of developed samples to gain insight for future samples. There is a strong move towards virtual validation as a mean of reducing development time. This paper demonstrates a methodology for modelling of the input filter stage of electronic control units. The simulation results are compared to the conducted emission measurements based on CISPR 25 standard. The methodology is applied to a test board specifically designed to validate the methodology. The differences in results are discussed. Proposals for model improvements are given. 2. A. Križanić (University of Zagreb FER, Zagreb, Croatia), M. Magerl (ams-OSRAM AG, Premstaetten, Austria), T. Mandić (University of Zagreb FER, Zagreb, Croatia) Characterization of Microstrip Resonator for EM Immunity Measurements  This paper presents a design of microstrip resonator. The microstrip resonator is used to generate an EM field for immunity testing of ICs located near the transmission line. The microstrip line is designed on an RF substrate and the measurement results are compared with the 3D EM simulation results. Connecting the SMD capacitors to the microstrip line creates an LC resonator with a frequency of 13,56 MHz. At this frequency a resonance is generated that enables immunity tests with increased EM field amplitude. The results of the simulated EM field values are compared with the results obtained with the specially developed near-field scanner. 3. A. Barua, V. Sharma (University of Turku, Turku, Finland) Biomimetic Breathable Surfaces for Triboelectric Nanogenerator for Energy Harvesting  This work presents a flexible, bioinspired triboelectric nanogenerator (TENG) that harnesses the unique microfractal architecture of natural leaf skeletons to enhance energy harvesting performance. By integrating leaf skeletons coated with metal nanowires as current collectors with biomimetic tribopositive Nylon 6 and tribonegative PVDF layers, the resulting biomimetic TENG offers significantly improved charge generation, higher output power density, and excellent mechanical durability. The intrinsic hierarchical and fractal patterns of the leaf skeletons endow the device with both enlarged surface area and enhanced charge carrier density, while simultaneously providing breathable, flexible interfaces ideal for wearable applications. Characterization results demonstrate how these fractal features increase surface roughness, improve contact intimacy, and boost triboelectric charge transfer efficiency under mechanical stimuli. Preliminary tests for body energy harvesting underscore this TENG’s potential in sustainable and portable energy solutions. Overall, this study highlights the effectiveness of bioinspired fractal architectures in driving performance improvements ranging from enhanced durability to superior breathability in next-generation triboelectric energy harvesting devices. 4. I. Budić, T. Marković (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia) High Spectral Purity Sinusoidal Voltage Signal Source for Neuromodulation in the Frequency Range from 1 Hz to 500 kHz  The sinusoidal voltage signal source for operation in the frequency range from 1 Hz to 500 kHz is designed. The proposed system consists of an AD9833 integrated waveform generator and a two-stage amplifier based on low-offset voltage operational amplifiers in feedback topologies. It is designed for driving the transconductance amplifier required to generate the sinusoidal current signal for specially designed coils for neuromodulation by generating the sinusoidal magnetic field. The topology of the signal source is explained theoretically and tested in the Keysight Advanced Design System simulation software. A printed circuit board is designed for the signal source. The characterization of the designed electronic circuit is performed. The sinusoidal voltage source presented has a negligible direct current (DC) offset and achieves high spectral purity over the entire frequency range of interest, which is particularly important for the application. The user controls the frequency of the output voltage signal via the Serial Peripheral Interface (SPI), while the amplitude is set manually via the analog potentiometer resistor, as desired for the application. The maximum amplitude of the output signal achieved over the frequency range of interest from 1 Hz to 500 kHz exceeds 200 mV peak-to-peak as required for the application. 5. A. Cortiula, M. Danelutti (University of Udine, Udine, Italy), D. Menin, A. Bandiziol (Infineon Technologies Austria AG, Villach, Austria), F. Driussi (University of Udine, Udine, Italy), P. Palestri (University of Modena and Reggio Emilia, Modena, Italy) Comparison between NRZ, PAM-3, PAM-4 and Duobinary Modulation in High-Speed Serial Interfaces  We employ a modeling approach based on the probabilistic construction of the eye-diagram to compare NRZ, PAM-3, PAM-4 and duobinary for high-speed serial interfaces in the >10 Gb/s range. A realistic model for the channel attenuation is used and equalization is applied to the system. The different modulation schemes are compared at different data rates and channel attenuations for the same transmitted voltage swing, identifying the most efficient in the various situations. Doubinary is implemented here by setting the equalizer so that a single bit results in a pulse response of the channel+equalizer extending over two bit period. 6. A. Miloš, G. Molnar (Ericsson Nikola Tesla d.d., Zagreb, Croatia), M. Vučić (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia) Spectrally Efficient UWB Pulse Shaping Based on Sharpening of Polynomially Weighted Gaussian Pulses  Polynomially weighted Gaussian pulses such as Gaussian derivatives and recently developed flat-spectrum Gaussian pulses are well localized in time. Therefore, they are suitable for use in ultra-wideband (UWB) systems. However, their efficiency in filling UWB spectral masks is limited. In this paper, we propose polynomial sharpening of their amplitude spectra that significantly improves this efficiency. To obtain a high efficiency, we introduce polynomials that enforce flatness at the spectrum's peak and provide controllable steepness in its transition regions. The proposed approach is illustrated with the design of UWB pulses that effectively fill the FCC spectral masks. 7. A. Žamboki, L. Gočan (University of Zagreb, Faculty of electrical engineering, Zagreb, Croatia), J. Mikulić, G. Schatzberger (ams-OSRAM AG, Premstaetten, Austria), T. Mandić, A. Barić (University of Zagreb, Faculty of electrical engineering, Zagreb, Croatia) Reducing Mechanical Stress Sensitivity of Integrated Circuits Through Component Rotation in Layout  This paper presents a method for reducing mechanical stress sensitivity that focuses on layout optimization. Mechanical stress is caused by IC packaging and can potentially bring the circuits out of specifications, but most circuit simulators currently lack the models needed to simulate these stress effects. The proposed methodology utilizes the developed stress-dependent MOSFET and resistor models for circuit simulations to find the optimal layout topology. It is shown that by rotating critical circuit parts in the layout, the sensitivity to stress can be reduced without changing other circuit characteristics. An example procedure is performed on a CMOS reference current source and the simulations show that the stress-induced change in output current can be reduced by 25% in the worst case in all corners by rotating only a single reference resistor. 8. L. Gočan, A. Žamboki (University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, Croatia), J. Mikulić, G. Schatzberger (ams-OSRAM AG, Premstaetten, Austria), T. Mandić, A. Barić (University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, Croatia) Signal Conditioning Circuit for CMOS-Based Wheatstone Bridge Stress Sensors  This paper presents the design of an analogue signal conditioning circuit for use with a matrix of CMOS-based Wheatstone bridge stress sensors. The circuit supplies the bias voltage to the sensors, retrieves the bridge diagonal voltage from the sensors, and amplifies the diagonal voltage with an instrumentation amplifier. The bias voltage supply and diagonal voltage retrieval is realised using a circuit comprising multiplexers and demultiplexers. The bias voltage is rotated in four directions across the Wheatstone bridge, enabling the use of the switched voltage method for the stress measurements. The diagonal voltage is retrieved for each bias voltage direction. The instrumentation amplifier is realised with three operational amplifiers and has an adjustable gain, which is realised by switching between different gain selection resistors. The proper functioning of the circuit is confirmed by simulations. 9. J. Kundrata, A. Baric (Faculty of Electrical Engineering and Computing University of Zagreb, Zagreb, Croatia) Architectural and Post-Silicon Evaluation of RISC-V vs. Cortex-M0+ SoCs  This paper presents a comparative evaluation of RISC-V and ARM Cortex-M0+ based System-on-Chip (SoC) implementations, analyzing their architectural design, physical implementation, and post-silicon verification. The study examines power, performance, and area (PPA) trade-offs to assess the suitability of each architecture for embedded applications. Both SoCs are fabricated using a TSMC 65 nm process, with results showing that the RISC-V based design offers greater flexibility and scalability but at the cost of increased power consumption and area. The Cortex-M0+ based SoC, on the other hand, demonstrates better power efficiency and maintains stable operation at slightly higher frequencies. FPGA-based shmoo testing confirms the operational boundaries of both designs, revealing distinct voltage-frequency scaling characteristics. These findings provide valuable insights into the design considerations for low-power and high-performance embedded systems. Friday, 6/6/2025 9:00 AM - 1:00 PM, Bellavista, Grand hotel Adriatic, Opatija 9:00 AM - 1:00 PM Papers  1. B. Pejcinovic (Portland State University, Portland, United States), H. Tran (Portland State University, Portland, United States), A. Ramachandran, K. Thompson, R. Doneker (Tangitek LLC, Portland, United States) Effects of Calibration and De-embedding on Material Parameter Extraction Using Coaxial Airline  Electrical characterization can involve many different parameters but here we will focus on material permeability (dielectric constant) and permittivity. Measurements using coaxial airline have been around for a long time and are included in some commercial software for parameter extraction, such as Keysight N1500A. In this paper, we will examine the effects of various approaches to calibration and de-embedding of the measurements in the 2 - 18 GHz range. The coaxial airline used has APC-7 connectors and the best results are expected when using a calibration kit for that set of connectors. However, in practice many labs may only have calibration kits for 3.5mm or SMA connectors. Furthermore, adapters will have to be used to connect to the APC-7 airline and they have to be de-embedded. We will report on our observations of how well different calibration and de-embedding techniques perform when used in conjunction with Keysight’s N1500A material parameter extraction software. Our intended application is characterization of microwave absorbers and we will focus on the extraction procedures that deal with both permittivity and permeability 2. C. Zhang (School of Information Science and Engineering, Shenyang University of Technology, Shenyang, China), H. Wu ( College of Information Science and Engineering, Shenyang Ligong University, Shenyang, China), F. Qi (Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China), Y. Guo (School of Information Science and Engineering, Shenyang University of Technology, Shenyang, China), J. Bao (Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China) Design of a High-Gain Biconvex Non-Spherical Lens Antenna for Millimeter-Wave Communication Applications  This study introduces a biconvex non-spherical lens horn antenna designed for operation in the millimeter-wave frequency range. Significant improvements were achieved by analyzing the phase relationship of the aperture field and iteratively adjusting the lens height. The lens, made of Teflon, serves as the medium in the form of a biconvex non-spherical lens. Through simulation analysis, it was found that the dielectric lens notably reduced the phase error in the antenna aperture field and increased the antenna gain. The antenna gain increased from 27.61dB to 29.11dB, with the dielectric lens reducing the antenna's 3dB beamwidth. In cases where the maximum gain in the E-plane decreased by 3dB, the sum of the absolute values on both sides decreased from 7.12° to 5.61°, and in the H-plane from 6.66° to 5.72°. The length of the antenna aperture field matches that of a standard horn antenna. Further optimization could lead to its application in millimeter-wave communication systems, demonstrating its significance in millimeter-wave antenna design research. 3. W. Zhang (School of Information Science and Engineering, Shenyang University of Technology, Shenyang, China), H. Wu (College of Information Science and Engineering, Shenyang Ligong University, Shenyang, China), F. Qi (Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China), Y. Guo (School of Information Science and Engineering, Shenyang University of Technology, Shenyang, China), J. Bao (Shenyang Institute of Automation, Chinese Academy of Sciences, Shenyang, China) Experimental Millimeter-Wave Radar Image Analysis for Ice Detection in Low-Temperature Environments  This study proposes an experiment utilizing millimeter-wave (MMW) radar technology with FMCW modulation, featuring a center frequency of 94 GHz and a bandwidth of 1 GHz, to image targets in low-temperature environments. Imaging experiments were conducted on ice cubes of varying dimensions from different viewpoints. The experimental results show that the MMW radar successfully obtained the contour images of ice cubes in different forms, and the minimum ice cube length was 7cm. Radar waves can penetrate the ice layer and reflect the contours of the ice cubes, thereby achieving high-resolution imaging. This research verifies the effectiveness of radar imaging in low-temperature environments and provides new technical ideas for fields such as ice and snow research and non-destructive testing of materials. 4. M. Chavoshi, M. Martinic, G. Vandenbosch, B. Nauwelaers (KU Leuven, Leuven, Belgium), T. Markovic (University of Zagreb, Zagreb, Croatia), D. Schreurs (KU Leuven, Leuven, Belgium) Application of a Calibration Technique for Broadband Dielectric Characterization Using a Narrowband Microwave Resonator Sensor  Microwave sensing has become a powerful tool for characterizing material properties, particularly in biomedical and material science applications. Among various microwave sensors, narrowband resonance-based sensors stand out for their high sensitivity, attributed to the strong field confinement they provide. Traditionally, the analysis of dielectric properties using resonance-based microwave sensors is restricted to a single frequency of operation. However, the scattering parameters measured by these sensors contain information over the entire frequency range, which can be leveraged for enhanced material characterization. In this work, we demonstrate the application of a calibration technique to an interdigitated electrode (IDE)-based microwave resonator sensor operating in the 3.5–4 GHz range. By de-embedding two-port measurements, the sensor accurately retrieves the complex permittivity of materials under test (MUT). The technique was validated using ethanol-water mixtures, where three calibration samples with known permittivity (70%, 80%, and 90% ethanol) enabled the characterization of a fourth sample (60% ethanol). The retrieved permittivity values showed excellent agreement with commercial coaxial probe measurements, achieving an average error of 0.74% for the real part and 0.38% for the imaginary part. This study highlights the potential of applying this calibration approach to novel microwave sensor designs, expanding their utility for high-precision, broadband material characterization. 5. P. Kolar (VERN' University, Zagreb, Croatia), L. Blažok (Geotech d.o.o., Rijeka, Croatia), D. Bojanjac (Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia) Improving NMR Sensitivity with a Predictive Noise Modeling Calculator  Nuclear magnetic resonance (NMR) spectroscopy systems face significant challenges, including noise-related limitations that impact sensitivity and prolong measurement times. These issues arise from suboptimal configurations in the receiving chain, where background noise, gain mismatches, and signal deterioration collectively reduce system performance. Addressing these problems often requires labor-intensive trial-and-error approaches, which are inefficient and costly. To overcome these challenges, a comprehensive noise model has been developed, enabling precise predictions of signal-to-noise ratios (SNRs) and overall noise properties for NMR receiving chains. This model identifies the weakest components in the chain, enabling targeted improvements to system sensitivity and performance. Here, we present a JavaScript-based calculator that implements this noise model to make this solution accessible and practical. The tool allows users to input critical parameters such as noise figures, gains, and losses for each component in the receiving chain. It then computes the overall noise figure and predicts system performance metrics, providing clear insights for optimizing the chain configuration. This calculator offers an accessible and practical solution for researchers, allowing digital experimentation with configurations and reducing the need for costly physical adjustments. The tool aims to empower the NMR community to achieve faster, more precise measurements and advance experimental efficiency and accuracy.

 
 

Basic information:

Marko Koričić (Croatia), Vladimir Čeperić (Croatia), Mirko Poljak (Croatia), Tomislav Markovic (Croatia)

Slavko Amon (Slovenia), Dubravko Babić (Croatia), Željko Butković (Croatia), Maurizio Ferrari (Italy), Mile Ivanda (Croatia), Branimir Pejčinović (United States), Jörg Schulze (Germany), Tomislav Suligoj (Croatia), Aleksandar Szabo (Croatia)

Juncheng Bao (China), Milan Bjelica (Serbia), Vladimir Čeperić (Croatia), Tihomir Knežević (Croatia), Marko Koričić (Croatia), Mindaugas Lukosius (Germany), Tvrtko Mandić (Croatia), Tomislav Marković (Croatia), Bart Nauwelaers (Belgium), Mirko Poljak (Croatia), Davor Vinko (Croatia)

The student discount doesn't apply to PhD students.

NOTE FOR AUTHORS: In order to have your paper published, it is required that you pay at least one registration fee for each paper. Authors of 2 or more papers are entitled to a 10% discount.

Marko Koricic
University of Zagreb
Faculty of Electrical Engineering and Computing
Unska 3
HR-10000 Zagreb, Croatia

Phone: +385 1 6129 953
GSM: +385 98 671 391
Fax: +385 1 6129 653
E-mail: marko.koricic@fer.hr

The best papers will get a special award.
Accepted papers will be published in the ISSN registered conference proceedings. Papers presented at the conference will be submitted for inclusion in the IEEE Xplore Digital Library. 

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