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IEEE zadržava pravo neobjavljivanja radova u bazi IEEE Xplore ukoliko radovi nisu prezentirani na skupu.
Radovi
Predsjedatelj: Tomislav Suligoj
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M. Paun, C. Dehollain (EPFL, Lausanne, Switzerland)
Analysis and Modeling of Capacitive Electrodes for Insulin Dose Detection 
In this paper, a three-dimensional physical model for the capacitive measurement in an insulin pen used by diabetic persons has been developed. To this purpose, ANSYS Maxwell 3D software has been used to faithfully model an insulin pen and numerically assess the electrode capacitance. A configuration with four electrodes, of given dimensions for their thickness and length, has been chosen for the cap. Consequently, information on the capacitance values between both face-to-face and neighbour electrodes has been obtained. This model can be used to predict the value of the electrode capacitance in many different situations imagined by the designer.
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S. Faramehr, B. Thomas (Swansea University, Swansea, United Kingdom), N. Jankovic (University of Nis, Nis, Serbia), J. Evans, M. Elwin, P. Igic (Swansea University, Swansea, United Kingdom)
Analysis of GaN MagFETs Compatible with RF Power Technology
The three-dimensional simulations, calibration, measured currents and calculated relative sensitivities of the first-ever fabricated double-drain gallium nitride (GaN) magnetic field effect transistor (MagFET) are given in this work. The MagFETs are GaN high electron mobility transistors (HEMTs) capable of operating under harsh environments. Geometrical and operational analysis are carried out on MagFETs using commercial simulation software Silvaco. The analysis shows promising relative sensitivities of 6.84%T-1 and 5.04%T-1 at ambient temperatures of 400 K and 500 K, respectively. In addition, the relative sensitivity of fabricated device is improved from 12%T-1 to 24%T-1 at 300 K by optimising device geometrical parameters.
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J. Cheng, P. Li, W. Chen, B. Yi, X. Chen (University of Electronic Science and Technology of China, Chengdu, China)
Simulation Study of a Deep-Trench LDMOS with Bilateral Super-Junction Drift Regions
An improved structure of the Deep-Trench Lateral Double-diffused Metal-Oxide-Semiconductor transistor (DT-LDMOS) is proposed and studied. The most improvement is that a well-known concept of super-junction is simultaneously applied to the bilateral drift regions beside the deep-trench. Thus, in comparison with the conventional device, the Figure of Merit (FOM, which equals BV^2/Ron, sp) of the proposed one is increased by about 35.6%, which means a significant reduction of conduction loss is achieved. Another improvement is that the device substrate is changed from silicon-on-insulator to ordinary bulk silicon. Therefore, the highest lattice temperature in a heat dissipation test is reduced from about 373 K for the conventional device to about 312 K for the proposed one, which means a better heat dissipation performance is obtained. All in all, the proposed device not only attains a remarkable improvement in electric characteristics, but also possesses an enhanced reliability. It is believed to be a promising device for the monolithic power ICs with enhanced performance.
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W. Chen, J. Cheng, J. Lin, X. Chen (University of Electronic Science and Technology of China, Chengdu, China)
Simulation Study on the High-k SJ-VDMOS with Gradient Side-Wall
The influences of gradient side-walls in a High-k Super Junction Vertical Double-Diffused MetalOxide-Semiconductor (High-k SJ-VDMOS) and in an ordinary Super Junction VDMOS (SJ-VDMOS) are studied and compared according to the analysis and simulations. The two devices show the same steady on-state current density for different side-wall gradient, but their breakdown voltages (Vb) acutely vary and, therefore, their FOM (Figure of Merit, which is equal to the square of Vb divided by the specific on-resistance) are varied. The study indicates that, the Vb of the device with more lightly doped pillars will be less impacted by the side-wall gradient, and the one having the pillars with unequal areas will be more impacted. Moreover, it is also demonstrated that, an appropriate positive side-wall gradient (namely, the Hk-pillar is wider at the top than at the bottom) would significantly benefit the Vb and FOM. The comparisons between the High-k SJVDMOS and the ordinary SJ-VDMOS prove the former is more resistive to the side wall gradient deviation. Meanwhile, these study results are believed to be a useful and helpful reference to improve the High-k SJ-VDMOS.
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M. Koričić, J. Žilak, Ž. Osrečki, T. Suligoj (Fakultet elektrotehnike i računarstva, Zagreb, Croatia)
Analysis of Tunable BVCEO in Horizontal Current Bipolar Transistor with Floating Field Plates
Open base breakdown voltage (BVCEO) tuning in Double-Emitter Horizontal Current Bipolar Transistor with floating field plates (FFPs) is analyzed by the device simulations. Tuning is obtained by stepping of the FFPs potential which is controlled via capacitive coupling between neighboring FFPs. When coupled, they serve as the field plates for shaping of the electric potential distribution, introducing the additional drift regions in base-collector depletion region. Breakdown mechanisms in case of partial and complete shielding of the collector E-field by the FFPs are identified. In case of partial shielding, the inner electric field peaks are responsible for breakdown, whereas in the case of complete shielding, breakdown occurs at the outermost drift region. In completely shielded, device very high BVCEO can be obtained by stacking a large number of FFPs. Devices with BVCEO up to 70 V are obtained.
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Ž. Osrečki, J. Žilak, M. Koričić, T. Suligoj (Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Large-signal characterization of Horizontal Current Bipolar Transistor (HCBT) by load-pull measurements
Load-pull and source-pull characterization of packaged Horizontal Current Bipolar Transistor (HCBT) is performed at 2.4 GHz. A fully-calibrated, automated load-pull measurement setup is used the determine the optimal matching conditions at both input and output of the transistor, considering maximum output power, efficiency and linearity. Three classes of power amplifier (PA) operation are investigated, namely Class A, Class AB and Class C. Measured S-parameters are used to compare the small-signal with large-signal behavior of the packaged HCBTs. The distortion of the output current waveform is approximately deduced by observing the change in the output DC current. Matching impedances and bias points for all classes of operation are further optimized by employing the load-pull contours for output power, drain efficiency and transducer gain. With the output power of more than 23 dBm and gain of 11 dB, HCBT shows a great potential for RF power amplifier design for modern wireless communication standards, such as Wi-Fi and 4G LTE.
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Pozvano predavanje
Predsjedatelj: Marko Koričić |
L. Nanver (University of Twente, Enschede, Netherlands)
An Experimental View on PureB Silicon Photodiode Device Physics
PureB silicon photodiode technology is distinguished by enabling nm-shallow junction depths that bring the light-sensitive region right up to the Si surface. This is combined with low dark currents, and robust light-entrance windows can be made from as little as a layer of 2-nm-thick pure boron. The understanding that these attractive properties are due to the creation of a layer of fixed negative charge when boron is deposited on silicon is supported by extensive experimental observations. For example, PureB p+n-like diodes with equally attractive I-V characteristics can be fabricated with boron layers deposited in the temperature range 400°C to 700°C, even though no doping of the bulk Si can be expected at temperatures as low as 400°C. Here a number of electrical test structures, specifically developed to study the behavior of as-deposited PureB junctions will be discussed along with experiments designed to investigate the influence of post-processing steps. These include thermal/laser annealing steps and metal contacting schemes. The experiments show that post-processing can degrade the interface and cause an increase in the otherwise ideal diode saturation current even in situations where the interface is replaced by ultrashallow p+-doped Si regions.
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| Radovi |
A. Elsayed, J. Schulze (University of Stuttgart, IHT, Stuttgart, Germany)
Characterization of Thin Boron layers Grown on Silicon Utilizing Molecular Beam Epitaxy for Ultra-shallow pn-Junctions
Given its desirable physical and electrical properties, for decades, B has been employed in many areas of research and industry [1]. Nowadays, it is used mainly in the semiconductor industry for the unique characteristics of its compounds and as a p-type dopant species by means of ionic implantation or epitaxy.
For the purpose of this work, the growth properties of B films with a thickness of a few nm are investigated. Growth is realized by Molecular Beam Epitaxy. Furthermore, growth temperatures ranging from 500 °C to 700 °C as well as variations in deposition time and conse¬quent layer thicknesses are investigated. Resultant layers are utilized to fabrica¬te p+n-n+-junction diodes for electrical cha¬racterization and evaluation [2-3].
Commercially acquired Antimony (Sb) doped n+ Si (100) substrates with lightly n-type doped top layer grown by means of chemical vapor deposition with a thickness of 3 µm were utilized to realize ultra-shallow p+n-n+-junction.
Diodes fabricated with these junctions display very low saturation current densities (~ 10-8 A/cm2) typical for conventional deep-junctions although at a fraction of the thickness. The diodes also display low series resistance as well as high ideality factors (Fig.1). Furthermore, diodes fabricated with these junctions display very high reverse breakdown voltages with characteristic breakdown behavior (Fig.2).
Furthermore, use of these junctions for ultra-thin emitter con¬tacts for insulated-gate bipolar transi¬stors (IGBTs) will be discussed.
[1] Golikova, O. A. (1979), Boron and Boron-based semiconductors. phys. stat. sol. (a), 51: 11–40. doi:10.1002/pssa.2210510102M.
[2] J. Nishizawa, K. Aoki, and T. Akamine, “Ultrashallow, high doping of boron using molecular layer doping,” Applied Physics Letters, vol. 56, no. 14, pp. 1334–1335, 1990.
[3] F. Sarubbi, T. L. M. Scholtes, and L. K. Nanver, “Chemical Vapor Deposition of α-Boron Layers on Silicon for Controlled Nanometer-Deep p+n Junction Formation,” Journal of Electronic Materials, vol. 39, no. 2, pp. 162–173, Feb. 2010.
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T. Knežević (Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia), L. Nanver (MESA+ Institute for Nanotechnology, University of Twente, Enschede, Netherlands), I. Capan (Ruđer Bošković Institute, Zagreb, Croatia), T. Suligoj (Faculty of Electrical Engineering and Computing, University of Zagreb, Zagreb, Croatia)
Non-linear Behavior of Al-contacted Pure Amorphous Boron (PureB) Devices at Low Temperatures
Deposition of pure amorphous boron (PureB) layers on n-type Si results in p+n-like devices even in cases where B in-diffusion during the deposition is not expected. It is suspected that such behavior is due to the formation of an interfacial hole layer (IHL) between the PureB and Si. To further investigate physical mechanisms governing conduction of holes across the PureB/Si interface and through the IHL, electrical measurements were performed from room temperature down to cryogenic temperatures as low as 100 K. In this paper, current-voltage (I-V) measurements are made on structures where the PureB connects to p-type Si regions. One set of devices comprises ring-shaped structures designed for measuring the conductance through the IHL. In these structures, the PureB layer is deposited in rings that are contacted at the inner and outer perimeter with Al. Another set of samples includes devices where the PureB layer was deposited on p-type bulk Si. At room temperature, a close to linear change of current with voltage was seen irrespective of the PureB layer thickness and post-deposition processing. Lowering the operating temperature led to an increasingly non-linear I-V characteristics. Plausible explanations for the non-linear behavior are considered and discussed in the paper.
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F. Segmanovic, F. Roger, G. Meinhardt, I. Jonak-Auer (ams AG, Unterpremstätten, Austria), T. Suligoj (University of Zagreb, Faculty of electrical engineering and computing, Zagreb, Croatia)
Impact of TCAD Model Parameters on Optical and Electrical Characteristics of Radiation-Hard Photodiode in 0.35µm CMOS Technology
In this paper, a variability Design of Experiment (DoE) is performed on a radiation-hard photodiode structure in order to understand how the physical parameters of the device impact its spectral responsivity and dark current. The varied physical parameters describe the carrier mobility, lifetime, energy bandgap and recombination models. The electrical and optical performance of the device are simulated using TCAD software, as a function of varied physical parameters. The simulations are calibrated to the device measurements. The analysis of the design showed that the carrier lifetime is the most influencing parameter that impacts both the spectral responsivity and the dark current. Mobility parameters and Auger recombination parameters impact the spectral responsivity, while the energy bandgap at 340 K impacts the dark current. Finally, the model parameters that fit the measured dark current are obtained by the thorough variation simulations.
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Y. Kawaguchi, L. Augel (Stuttgart of University, Stuttgart, Germany), H. Uchida, M. Inoue (Toyohashi University of Technology, Toyohashi, Japan), J. Schulze, I. Fischer (Stuttgart of University, Stuttgart, Germany)
Simulation-Based Optimization of Ge-PIN-Photodiodes with Al Nanohole Arrays for Refractive Index Sensing
Biosensors based on surface plasmon polaritons or localized surface plasmon polaritons can detect molecular binding events with high sensitivity via refractive index changes. In plasmonic nanohole arrays in thin metallic films, the transmission spectra can exhibit characteristic, asymmetric peaks (Fano resonances) that are particularly sensitive to surface refractive index changes. We integrated Al nanohole arrays into the metallization of vertical Ge-PIN-photodiodes and observed Fano resonances in the photocurrent generated in the Ge-PIN-photodiode, thus fabricating a compact refractive index sensor that can be directly integrated with signal conditioning and wireless transmission circuits. Here, we present simulation results for our devices using finite difference time domain (FDTD) method. We investigate the influence of nanohole array parameters such as hole diameter and lattice periodicity on Ge-PIN-photodiode response. Furthermore, we show that Ge-PIN-photodiode sensitivity can be optimized by adjusting thicknesses of the Al layer as well as the semiconductor layers of the Ge-PIN-photodiode underneath. Here, the Al thickness particularly has a large influence on optical properties of our devices. We conclude that sensors consisting of Al nanohole arrays with Ge-PIN-photodiodes can achieve high sensitivities and promising applications in refractive index sensing.
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L. Hänel, Y. Elogail, D. Schwarz, I. Fischer, J. Schulze (University of Stuttgart, Stuttgart, Germany)
Performance of C6H8O7-treated and H- and Cl-passivated Ge-MOS-capacitances on Ge-Virtual-Substrate on Si(001)
As Moore’s law is approaching its physical limitations, transistor concepts besides the classical MOSFET have been invented. The TFET is a promising candidate due to the theoretically predicted subthreshold swing below 60 mV/dec of this device concept. However, Si is not the substrate of choice for TFETs – carrier mobility and resulting on-currents are too low. Therefore, Ge is suggested as active material for p-channel TFET with high-k material as Gate oxide. This development implicates new issues in the manufacturing process. That is because the Ge/high-k-interface is not of natural high quality as the Si/SiO2-interface, causing the Gate-MOS-capacitance to be the critical part of the TFET. New cleaning and passivation methods for the Ge surface are necessary. Nevertheless, Si will remain the substrate material what requires co-integration of Ge on Si. As a first attempt, we show Ge-MOS-capacitors with Al2O3 as Gate oxide on Ge-Virtual-Substrate on Si(001) of good performance with hysteresis down to 0.6 V. We propose a combination of conventional and unconventional cleaning steps as H2O2 and C6H8O7 (Citric Acid) followed by H- and Cl-passivation. The discussed data are corrected for series resistance and parasitic capacitances that can be used as parameters for cleaning and passivation efficiencies.
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F. Berkmann, L. Augel (Institut für Halbleitertechnik, Universität Stuttgart, Stuttgart, Germany), M. Schilling, A. Berrier (1. Physikalisches Institut, Universität Stuttgart, Stuttgart, Germany), D. Schwarz, D. Weißhaupt, M. Oehme, J. Schulze, I. Fischer (Institut für Halbleitertechnik, Universität Stuttgart, Stuttgart, Germany)
Optical Characterization of Highly n-Type Doped Ge0.95Sn0.05 Rod Antennas on Si(001) Substrates
Plasmonic excitations in metal nanostructures can be used to control and manipulate optical energy in the visible and infrared spectrum and have been used to enable biosensing, to enhance absorption and quantum yields for photovoltaics and to enhance the energy efficiency of light-emitting devices. For light at mid-infrared (MIR) wavelengths, metals become less suitable for plasmonic applications as a result of the high Drude losses. At those wavelengths, highly doped semiconductors are potential alternatives. The doped group IV alloy GexSny has been shown to be particularly interesting. We present results on the fabrication and optical characterization of rod antennas fabricated from highly n-type doped Ge0.95Sn0.05 (n-GexSny) on Si(001) substrates. Extinction spectra were obtained via Fourier Transform Infrared (FTIR) Spectroscopy. To verify the measurement results the behavior of the n-Ge0.95Sn0.05 rod antennas was simulated. The results show that the n-Ge0.95Sn0.05 rod antennas absorb MIR radiation through plasmonic excitation. Two different peaks could be observed in the extinction spectra of the n-Ge0.95Sn0.05 rod antennas and attributed to two locally separated plasmonic modes. One mode forms on the n-Ge0.95Sn0.05/Si interface of the n-Ge0.95Sn0.05 rod antennas, the other one forms at the the n-Ge0.95Sn0.05/air interface. We discuss possible applications of this type of n-Ge0.95Sn0.05 rod antennas for MIR sensing.
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S. Artemkina, E. Grayfer, M. Kozlova (Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russian Federation), P. Poltarak, A. Poltarak (Novosibirsk State University, Novosibirsk, Russian Federation), V. Fedorov (Nikolaev Institute of Inorganic Chemistry SB RAS, Novosibirsk, Russian Federation)
Transition Metal Polysulfides and Their Potential Applications
Low-dimensional transition metal polysulfides are an interesting family of compounds, which have in common the presence of disulfide groups S–S. This feature dictates their unusual chemistry and electrochemistry. We have optimized synthetic procedures and systematically studied sulfides of IV-VI groups, such as TiS3, ZrS3, VS4, NbS3, CrS3 etc. in their bulk and nanosized forms. The nanosized samples were prepared by liquid-phase exfoliation of the bulk counterparts. Our preliminary studies show the promise of such materials for a variety of applications, including transistors, Li-ion batteries, and photocatalysis.
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T. Boudiar (Ecole Nationale Supérieure de Technologie , Algiers, Algeria), E. Verney, S. Capraro (Jean Monnet University, St-Etienne, France)
Possibility of Developing Coplanar Isolator via Deposited YIG Thin Films
The transmission coefficients of nonreciprocal coplanar waveguide are measured in the X-frequency band. The experimental results are compared to the simulated results obtained by HFSS for different magnetic field intensities. The isolator with a coplanar waveguide structure has been made on 12.3 m-thick thin film YIG, the nonreciprocal
effect (S21 - S12) can reach 2 dB at 9 GHz for an applied field of 280 mT.
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Pozvane prezentacije
Predsjedatelj: Dubravko Babić |
B. Brezina (EDMD Solutions Ltd., Zagreb, Croatia)
PADS – Electronic Product Creation Platform |
B. Brezina (EDMD Solutions Ltd., Zagreb, Croatia)
When Analysis Becomes Mandatory for PCB Design |
| Radovi |
B. Malnar (Intel, Neubiberg, Germany), G. Zelic (Intel, Hudson, MA, United States)
Timing Closure of Clock Enable Signals on a 32 nm Intel Itanium Processor
With modern high speed circuit design using state of the art automated place and route (APR) flows, synthesis of clock enable (CE) signals is becoming increasingly difficult in terms of timing closure. The size of APR blocks in digital physical design in microprocessor projects is expanding with every generation of microprocessors as the implementation tools become more capable of handling large designs with high quality results and fast turnaround times. However, larger APR blocks make CE synthesis progressively difficult as timing closure complexity on these signals increases dramatically. The main problem is due to a single CE register driving the signal to a relatively larger area of the design, and to a greater number of clock gating cells. In this paper, we present automated duplication of CE logic in the APR flow to achieve timing closure on a 32 nm Intel Itanium project. We show how timing convergence is achieved without any additional effort from the physical designers, and with no changes required in the RTL. Solutions to the CE problem with smaller degree of automation and more manual effort, which were used on our previous projects, are also discussed and compared, and the reasons they are deemed inadequate are explained.
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M. Magerl, B. Courivaud, C. Stockreiter (ams AG, Premstaetten, Austria), A. Baric (Sveučilište u Zagrebu Fakultet elektrotehnike i računarstva, Zagreb, Croatia)
Modelling of a Transmission Line Pulse Measurement Setup
A mixed lumped-distributed model of a transmission line pulse (TLP) measurement setup is presented. The model of the TLP generator, rise-time filter and probing needles is extracted based on the TLP measurements of open, short and matched loads in the voltage range up to 650 V. A behavioural model of an ESD protection device is built based on the measured quasi-static TLP characteristic and on the small-signal S-parameters of the device. The presented TLP generator and DUT models are verified by comparing the measured time-domain waveforms with the simulation results.
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S. Bramburger, P. Pitonak, D. Killat (Brandenburg University of Technology, Cottbus, Germany)
A Unary Coded Current Steering DAC with Sequential Stepping of the Thermometer Coded Register in 1 and 2 LSB Steps
This paper presents an 8-bit current steering DAC that uses unary current sources and a thermometer coded register. The thermometer coded register is controlled by sequentially stepping one or two steps up or down dependent on the control input. The enhanced step size mitigates the slew-rate limitation if the DAC is used in a delta-encoded tracking ADC. The sequential switching of thermometer coded DAC register does not require a binary to thermometer decoder and reduces complexity of error compensation.
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D. Arbet, M. Kováč, V. Stopjaková, M. Potočný (Department of IC Design and Test, Faculty of Electrical Engineering and Information Technology, Bratislava, Slovakia)
Bulk-Driven Fully Differential Difference Amplifier for Ultra-Low Voltage Applications
The paper deals with design and analysis of a fully differential difference amplifier (FDDA) that was implemented in 130 nm CMOS technology. The proposed FDDA can reliably work with the power supply voltage of 0.4 V and can be used as a basic analog building block of complex ultra-low voltage systems. The FDDA was designed using the bulk-driven technique, and the rail-to-rail input voltage range was ensured through the bulk-driven input transistors. Furthermore, the proposed FDDA was used as the building block of an ultra-low voltage-to-frequency converter (VFC).
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D. Vinko (Faculty of Electrical Engineering, Computer Science and Information Technology Osijek, Osijek, Croatia)
Minimizing Switching Time of Energy Harvesting Management Circuit
Energy management circuit is a mediator circuit between energy harvesting device and a load circuit. It operates without stable DC supply voltage which varies from 0 V to voltage level required by load circuit. Energy management circuit monitors the amount of energy collected from energy harvester and turns on and off the load circuit. With very low instantaneous power available from energy harvester, the energy management circuit must have as-low-as-possible power consumption. The problem is that with decrease of power consumption, the switching time increases proportionally. This paper proposes a energy management circuit with minimized switching time independent of power consumption. The proposed circuit is evaluated through simulations and laboratory measurements on a developed prototype. Evaluation has confirmed that the switching time of the proposed design is independent of power consumption and it depends only on the propagation delay time and transition time of MOS transistors used.
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N. Vokić, B. Goll, H. Zimmermann (Technische Universität Wien, Vienna, Austria)
Driver for 3D-Integrated Nonlinear Microring Resonator-Based Optical Modulators
This paper presents a driver circuit intended for optical modulators based on nonlinear 3D-integrated ring resonators. The circuit was designed in a 0.35µm BiCMOS technology and the measurements are performed on an electrical test chip. The driver delivers 3-V voltage swing while consuming 160 mW at a data rate of 10 Gb/s. The driver is suitable for NRZ binary as well as PAM-4 modulation formats.
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M. Vukomanović, M. Šprem, Z. Šipuš, D. Babić (Zagreb, Croatia, Croatia)
10-MSymbols/s QAM-16 Externally-Modulated Optical Link for Radio-Over-Fiber Applications
This paper discusses a preliminary investigation of the linearity of a Mach Zehnder optical modulator and a 20-km fiber-optic link involving 10 Msymbols/s QAM-16 modulation.
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G. Molnar, M. Babić (Ericsson Nikola Tesla d.d., Zagreb, Croatia), Z. Šipuš (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Sharpened Raised-Cosine FIR Filters
Shaping of transition bands in the ideal frequency response allows the analytic design of least-squares FIR filters with a direct control of the transition-band edges. The basic least-squares approximation is obtained by the Fourier series method. In this paper, we use it to develop a closed-form method for the design of steep roll-off FIR filters. The method is based on the frequency response obtained by the polynomial sharpening of raised-cosine transition band. The corresponding impulse response is well localized in time, what enables the design of low-order filters without additional window. Apparently, such an approach is suitable for the design of filters with wide transitions. However, for the design of filters with narrow transitions, composite systems are more appropriate. A computational efficient composite system is frequency-response-masking (FRM) filter. Therefore, to obtain narrow transition filters the sharpened raised-cosine filters are incorporated into the FRM structure. The features of the presented single and composite filters are illustrated by examples which include the design of spatial filters and Hilbert transformers.
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G. Molnar, A. Miloš (Ericsson Nikola Tesla d.d., Zagreb, Croatia), M. Vučić (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Closed-Form Approximation of Hilbert Transforms of Gaussian Derivatives Based on Weighted Polynomial Fitting
Hilbert transforms of Gaussian derivatives are related to Dawson's integral. Since this integral cannot be expressed in a closed form, various methods for the approximation of the derivatives have been developed. A closed-form approximation can be obtained by using the weighted polynomial fitting in which Gaussian function is used as the weighting function. Such an approach results in explicit approximation formulas. In literature, they are available only for the derivatives of the second, third, and fourth order. Furthermore, they utilize only low-order polynomials. In this paper, we propose an approximation of the Hilbert transforms of the Gaussian derivatives of arbitrary orders, which utilize high-order polynomials. The coefficients of these polynomials are obtained by using the least-squares error criterion. Closed-form expressions are provided for their calculation.
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Radovi
Predsjedatelj: Davor Vinko
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D. Jurišić, E. Emanović (University of Zagreb/Faculty of Electrical Engineering and Computing, Zagreb, Croatia), G. Moschytz (Bar-Ilan University/ Faculty of Engineering, Ramat-Gan, Ramat-Gan, Israel)
Influence of Distributed Resistors in Integrated Active-RC Filters
In this paper a voltage mode active-RC simulation of a passive ladder RLC filter is investigated in the integrated circuit realization. It is shown that by integration there arises a problem: the parasitic capacitance of integrated resistors in active-RC on-chip filters cause that those filters become unstable and oscillate. On-chip resistors having parasitic capacitances can be described as distributed elements with RC-transmission-line nature. Therefore, we show how to model the on-chip resistors and find the causes of filter instabilities and possible solutions. The simulations are run using PSpice. It is shown that more carefully designed and/or compensated analog filter will be stable and realizable in analog integrated-circuit technology.
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W. Brenner, N. Adamovic (TU Wien, Wien, Austria)
Standardization as a Tool for Promoting Innovation and Commercialization of a Circular Economy for PV Waste - the Example of the European H2020 Project CABRISS
Standardization as a Tool for Promoting Innovation and Commercialization of a Circular Economy for PV Waste - the Example of the H2020 Project CABRISS
Focus of the research efforts is using Si waste for the high throughput, cost-effective manufacturing of hybrid Si based solar cells. CABRISS http://www.spire2030.eu/cabriss demonstrates the re-usability and recyclability of end-of-life PV materials by associating together different sectors like the powder metallurgy (fabrication of Si powder based low cost substrate), the PV industry (innovative PV cells) and the industry of recycling (hydrometallurgy and pyrometallurgy) with a common aim : making use of recycled waste materials (Si, In and Ag). Proactive involvement in European standardization guarantees compatibility with the EU’s WEEE directive. CABRISS proactively cooperates with SEMI’s “TC Photovoltaics”, CENELEC’s CLC/TC 111X „Environment“ and CLC/TC 10 "Energy-related Products". Thus the consortium contributes to the interactions and benefits between research and standardization :
• raising awareness and
• fully exploiting the role of standards in order to increase the competitiveness of the EU.
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S. Tepić (Ericsson Nikola Tesla, Zagreb, Croatia), M. Ferenčević, H. Džapo (Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Analysis of Real-Time Kinematic Samples Error for Sensor Fusion Applications
Recent developments in the fields of autonomous vehicles led to their widespread acceptance in many usage scenarios which include remote inspection, particularly in places not easily reachable or dangerous to humans. Global navigation satellite systems have become popular due to their convenience and low cost. The main disadvantages of typically used GNSS systems are relatively low refresh rate and low positional accuracy. The real-time kinematic method can be used to enhance the precision of GNSS systems but it still provides a relatively low refresh rate. Inertial navigation systems are based on inertial sensors, such as accelerometers and gyroscopes which provide high refresh rate. The main disadvantage of INS systems is the inherently present positional integration error of inertial sensors. The sensor fusion approach can be used to couple both the high positional accuracy brought by RTK and the high refresh rate resulting from use of INS. However, coupling RTK and INS via sensor fusion approach is not a straightforward process due to challenges introduced by outliers and discontinuities in RTK positional data due to various factors affecting the GNSS signal reception. In this paper we present a static analysis of captured RTK data that can be used for further development of a method for compensation of unwanted side effects in order to enhance and stabilize the positional accuracy of the sensor fusion systems that incorporates both RTK and INS approaches.
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D. Barbarić (Ericsson Nikola Tesla d.d., Zagreb, Croatia), J. Vuković, D. Babić (Fakultet elektrotehnike i računarstva, Sveučilište u Zagrebu, Zagreb, Croatia)
Link Budget Analysis for a Proposed Cubesat Earth Observation Mission
A Cubesat with payload for characterizing electromagnetic and geomagnetic field is proposed. We review the link budget requirements for this mission to enable high data rate communication between a low Earth orbiting satellite and an Earth station. Multiple frequency bands, typically used in Cubesat operations, are evaluated, including attenuation and other link impairments along the communication path. We also review the communication parameters in currently deployed and active Cubesat missions.
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B. Ćerimagić, A. Akšamović, D. Bošković (University of Sarajevo / Faculty of Electrical Engineering, Sarajevo, Bosnia and Herzegovina)
Implementation of a Low-cost Electrochemical Impedance Spectroscope
The paper describes an implementation of a low-cost electrochemical impedance spectroscope using a sound card on a computer. The main parts of the system are: PC’s sound card used for signal output and data acquisition, a current source, two measurement channels, software module for battery parameter estimation. The sinusoidal signal with required amplitude and frequency is generated from the MATLAB and using the D/A converter of the sound card. The current source is implemented as a class AB amplifier with a PI regulator. Measurement channels are designed to prepare battery response signals for the A/D conversion. The implementation allows utilizing different algorithms for parameters estimation. The system performance is demonstrated when used to estimate the parameters of a Lead-Acid battery, test results are presented and discussed.
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M. Dadić, M. Jurčević, K. Petrović, B. Ivšić, R. Malarić (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Automated System for the Measurement of AC Magnetization Characteristics
The paper presents a fully-automated system for the magnetic scalar hysteresis measurement of the ring core specimens. The system is based on the National Instruments PXI-4461 two-channel dynamic signal generation and two-channel acquisition cards. A power amplifier is designed and manufactured, based on the TDA2030 monolithic integrated circuit, and a computer code for controlling the measurement process is programmed in LabVIEW. The system applies the analog RC integration. The system allows graphical presentation of the measured hysteresis curves, and calculation and presentation of the first magnetization curve, approximated by locus points of the symmetric hysteresis cycles. The first magnetization curve can be exported in a format prepared for the importing in the finite element analysis (FEA) software.
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Osnovni podaci:
Voditelji:
Marko Koričić (Croatia), Željko Butković (Croatia), Petar Biljanović (Croatia)
Voditeljstvo:
Slavko Amon (Slovenia), Dubravko Babić (Croatia), Maurizio Ferrari (Italy), Mile Ivanda (Croatia), Branimir Pejčinović (United States), Tomislav Suligoj (Croatia), Aleksandar Szabo (Croatia)
Prijava/Kotizacija:
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PRIJAVA / KOTIZACIJE
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CIJENA U EUR-ima
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Prije 7.5.2018.
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Poslije 7.5.2018.
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| Članovi MIPRO i IEEE |
180
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200
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| Studenti (preddiplomski i diplomski studij) te nastavnici osnovnih i srednjih škola |
100
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110
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| Ostali |
200
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220
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Popust se ne odnosi na studente doktorskog studija.
Kontakt:
Marko Koričić
Fakultet elektrotehnike i računarstva
Unska 3
10000 Zagreb, Hrvatska
Tel.: +385 1 6129 671
GSM: +385 98 671 391
Fax: +385 1 6129 653
E-mail: marko.koricic@fer.hr
Najbolji radovi bit će nagrađeni.
Prihvaćeni radovi bit će objavljeni u zborniku radova s ISBN brojem. Radovi prezentirani na skupu bit će poslani za objavljivanje u bazi IEEE Xplore.
Postoji mogućnost da se odabrani znanstveni radovi uz određenu doradu objave u međunarodnom časopisu Journal of Computing and Information Technology (CIT).
Predsjednik Međunarodnog programskog odbora:
Karolj Skala (Croatia)
Međunarodni programski odbor:
Enis Afgan (Croatia), Slaviša Aleksić (Germany), Slavko Amon (Slovenia), Lene Andersen (Denmark), Vesna Anđelić (Croatia), Michael E. Auer (Austria), Dubravko Babić (Croatia), Snježana Babić (Croatia), Almir Badnjevic (Bosnia and Herzegovina), Marko Banek (Croatia), Mirta Baranović (Croatia), Bartosz Bebel (Poland), Ladjel Bellatreche (France), Petar Biljanović (Croatia), Eugen Brenner (Austria), Ljiljana Brkić (Croatia), Gianpiero Brunetti (Italy), Marian Bubak (Poland), Andrea Budin (Croatia), Željko Butković (Croatia), Željka Car (Croatia), Jesús Carretero Pérez (Spain), Matjaž Colnarič (Slovenia), Alfredo Cuzzocrea (Italy), Marina Čičin-Šain (Croatia), Marko Čupić (Croatia), Davor Davidović (Croatia), Marko Delimar (Croatia), Saša Dešić (Croatia), Todd Eavis (Canada), Maurizio Ferrari (Italy), Tiziana Ferrari (Netherlands), Bekim Fetaji (Macedonia), Nikola Filip Fijan (Croatia), Renato Filjar (Croatia), Tihana Galinac Grbac (Croatia), Enrico Gallinucci (Italy), Dragan Gamberger (Croatia), Paolo Garza (Italy), Liljana Gavrilovska (Macedonia), Ivan Gerlič (Slovenia), Matteo Golfarelli (Italy), Stjepan Golubić (Croatia), Montserrat Gonzales (United Kingdom), Francesco Gregoretti (Italy), Stjepan Groš (Croatia), Niko Guid (Slovenia), Jaak Henno (Estonia), Ladislav Hluchy (Slovakia), Željko Hocenski (Croatia), Vlasta Hudek (Croatia), Darko Huljenic (Croatia), Željko Hutinski (Croatia), Robert Inkret (Croatia), Mile Ivanda (Croatia), Hannu Jaakkola (Finland), Matej Janjić (Croatia), Leonardo Jelenković (Croatia), Rene Jerončić (Croatia), Dragan Jevtić (Croatia), Admela Jukan (Germany), Robert Jones (Switzerland), Peter Kacsuk (Hungary), Aneta Karaivanova (Bulgaria), Tonimir Kišasondi (Croatia), Marko Koričić (Croatia), Tomislav Kosanović (Croatia), Dieter Kranzlmüller (Germany), Marko Lacković (Croatia), Erich Leitgeb (Austria), Maria Lindén (Sweden), Dražen Lučić (Croatia), Marija Marinović (Croatia), Ludek Matyska (Czech Republic), Mladen Mauher (Croatia), Igor Mekjavic (Slovenia), Igor Mekterović (Croatia), Branko Mikac (Croatia), Veljko Milutinović (Serbia), Nikola Mišković (Croatia), Vladimir Mrvoš (Croatia), Jadranko F. Novak (Croatia), Predrag Pale (Croatia), Jesus Pardillo (Spain), Nikola Pavešić (Slovenia), Branimir Pejčinović (United States), Dana Petcu (Romania), Juraj Petrović (Croatia), Damir Pintar (Croatia), Željka Požgaj (Croatia), Slobodan Ribarić (Croatia), Janez Rozman (Slovenia), Rok Rupnik (Slovenia), Dubravko Sabolić (Croatia), Zoran Skočir (Croatia), Ivanka Sluganović (Croatia), Mario Spremić (Croatia), Vlado Sruk (Croatia), Stefano Stafisso (Italy), Uroš Stanič (Slovenia), Ninoslav Stojadinović (Serbia), Jadranka Šunde (Australia), Aleksandar Szabo (Croatia), Laszlo Szirmay-Kalos (Hungary), Davor Šarić (Croatia), Dina Šimunić (Croatia), Zoran Šimunić (Croatia), Dejan Škvorc (Croatia), Velimir Švedek (Croatia), Antonio Teixeira (Portugal), Edvard Tijan (Croatia), A Min Tjoa (Austria), Roman Trobec (Slovenia), Sergio Uran (Croatia), Tibor Vámos (Hungary), Mladen Varga (Croatia), Marijana Vidas-Bubanja (Serbia), Mihaela Vranić (Croatia), Boris Vrdoljak (Croatia), Slavomir Vukmirović (Croatia), Yingwei Wang (Canada), Mario Weber (Croatia), Roman Wyrzykowski (Poland), Damjan Zazula (Slovenia)
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