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Event program
Wednesday, 5/24/2017 4:00 PM - 6:00 PM,
Bellavista, Grand hotel Adriatic, Opatija
4:00 PM - 6:00 PMPapers 
1.B. Pejčinović (DEPARTMENT OF ELECTRICAL AND COMPUTER, PORTLAND, United States)
Active Learning, Labs and Maker-spaces in Microwave Circuit Design Courses 
Circuit design courses in general, and microwave circuit design courses as a subspecialty, have been taught over many decades. It is relatively recently, however, that instructors have started experimenting with more modern approaches to in-class and out-of-class instruction. In our attempt to make instruction more effective we have turned to: a) utilizing classroom interaction systems and collaborative work in class, b) studio-like approach to labs where students are encouraged to explore a problem through design, simulation, building and testing of simple structures, c) makerspaces that enable full design-build-test-redesign cycle of fairly sophisticated designs, and d) systematic literature reviews for graduate students taking the courses. We describe our experiences in designing and implementing a sequence of two courses, present assessment data, discuss obstacles to student learning, and propose additional ways to improve student learning.
2.M. Čupić, K. Brkić, Ž. Mihajlović (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
A Learning Tool for Synthesis, Visualization, and Editing of Programming for Simple Programmable Logic Devices 
Our experiences in teaching digital circuit design at university level indicate that students find it difficult to understand programmable logic devices (PLDs) such as PALs, PLAs, GALs and FPGAs. This is mainly due to the complexity of the topic and the lack of tools that visualize the inner workings of PLDs and enable students to modify and inspect individual components. The majority of publicly available SPLD-related tools are proprietary, platform-specific and do not expose all elements of the PLD structure to the user. In this work, we propose a learning tool that enables synthesis, visualization and editing the programming of a GAL16v8 SPLD. GAL16v8 has been chosen as it is simple enough that its physical implementation can be observed to the smallest detail, while enabling simultaneous realization of multiple Boolean functions. The tool is platform-independent and specifically tailored towards use in an educational setting, facilitating much better understanding of SPLDs through a hands-on experience.
3.T. Mandić, A. Barić (Fakultet elektrotehnike i računarstva, Zagreb, Croatia)
Active-Learning Implementation Proposal for Course Electronics at Undergraduate Level 
The course "Electronics 1" is taught at undergraduate level and covers broad area of electronics starting from the physics of semiconductors to the complex electronic system such as operational amplifier. This course is obligatory for sophomore students enrolled in Electrical Engineering and Information Technology undergraduate program as well as in Computing undergraduate program. Due to the course comprehensiveness and recognised lack of interest, students tend to study without understanding the studied concepts and their practical application. This paper presents the proposal to increase the interest in electronics by introduction of the active learning (AL) process. This AL process is supported by the developed AL module, i.e. clicker, which provides the hands-on experience of the topics studied throughout the course. We provide questionnaire proposal that will be given to groups of students and the results will be compared to the control group to assess the usefulness of the proposed approach.
4.J. Petrović, P. Pale (Fakultet elektrotehnike i računarstva Sveučilišta u Zagrebu, Zagreb, Croatia)
Decision trees in formative procedural knowledge assessment 
In this paper, an approach to automated formative assessment of procedural knowledge is described and evaluated. While assessment and representation of conceptual knowledge using visual aids such as of concept maps has often been analyzed and discussed in the literature, significantly less attention has been given to assessment of procedural knowledge. The approach described in this paper is based on automated evaluation of knowledge described by examinees in form of a decision tree against a repository of test cases. The examinee is afterwards provided with automatically generated feedback about the overall results of applying his decision tree, as well as possible changes required to correct them. The results of the pilot evaluation of a prototype system implementation are described and discussed.
Thursday, 5/25/2017 9:00 AM - 1:00 PM,
Bellavista, Grand hotel Adriatic, Opatija
9:00 AM - 1:00 PMPapers 
1.A. Chiasera (IFN - CNR CSMFO Lab. & FBK CMM, Trento, Italy), F. Scotognella (Politecnico di Milano, Dipartimento di Fisica and IFN-CNR, Center for Nano Science and Technology@Po, Milano, Italy), D. Dorosz (AGH University of Science and Technology, Faculty of Materials Science and Ceramics, Kraków, Poland), G. Galzerano (IFN – CNR and Politecnico di Milano, Dipartimento di Fisica, Milano, Italy), A. Lukowiak (Institute of Low Temperature and Structure Research, PAS, Wroclaw, Poland), D. Ristic (Ruđer Bošković Institute, Division of Materials Physics, Laboratory for Molecular Physics, Center of, Zagreb, Croatia), G. Speranza (FBK CMM FMPS Unit, IFN - CNR CSMFO Lab. & FBK CMM, Trento, Italy), I. Vasilchenko (IFN - CNR CSMFO Lab. & FBK CMM, Dipartimento di Fisica, Università di Trento, Trento, Italy), A. Vaccari (FBK CMM-ARES Unit, Trento, Italy), S. Valligatla (IFN - CNR CSMFO Lab. & FBK CMM, Dipartimento di Fisica, Università di Trento, School of Physics, Uni, Trento, Italy), S. Varas (IFN - CNR CSMFO Lab. & FBK CMM, Trento, Italy), L. Zur (Centro di Studi e Ricerche Enrico Fermi, IFN - CNR CSMFO Lab. & FBK CMM, Trento, Italy), M. Ivanda (Ruđer Bošković Institute, Division of Materials Physics, Laboratory for Molecular Physics, Center of, Zagreb, Croatia), A. Martucci (Dipartimento di Ingegneria Industriale, Università di Padova, Padova, Italy), G. Righini (Centro di Studi e Ricerche Enrico Fermi, Roma, Italy), S. Taccheo (College of Engineering, Swansea University, Swansea, United Kingdom), R. Ramponi (IFN – CNR and Politecnico di Milano, Dipartimento di Fisica, Milano, Italy), M. Ferrari (IFN - CNR CSMFO Lab. & FBK CMM, Centro di Studi e Ricerche Enrico Fermi, Trento, Italy)
Glass Based Structures Fabricated by rf-Sputtering 
Glasses activated by rare earth ions are the fundamental bricks of various photonic systems with application not only in ICT but also concerning lighting, laser, sensing, energy, environment, biological and medical sciences, and quantum optics. Recently a remarkable increase in the experimental efforts to control and enhance emission properties of emitters by tailoring the dielectric surrounding of the source has been performed. With this aim, several approaches, using nanocomposite materials or specific geometries, such as planar interfaces, photonic crystals, solid state planar microcavities, dielectric nanospheres, and spherical microresonators, have been proposed. However, the dependence of the final product on the fabrication protocol still remains an important task of the research in material science. Among the various techniques that could be employed to fabricate oxide dielectric materials rf-sputtering is a promising route to fabricate rare earth-activated waveguides and 1-D photonic crystals. In this paper we present some results obtained by our consortium regarding rf-sputtered glass-based structures focusing the discussion on photonics application. This research is performed in the framework of the projects COST MP1401 “Advanced Fibre Laser and Coherent Source as tools for Society, Manufacturing and Lifescience” (2014 - 2018), PAS-CNR (2014-2016), ERANet-LAC RECOLA, “Plasmonics for a better efficiency of solar cells” bilateral project between South Africa and Italy (contributo del Ministero degli Affari Esteri e della Cooperazione Internazionale, Direzione Generale per la Promozione del Sistema Paese), MaDEleNA PAT project.
2.V. Kuznetsov (Nikolaev Institute of Inorganic Chemistry, Novosibirsk State Technical University, Novosibirsk, Russian Federation), B. Kholkhoev (Buryat State University, Bailak Institute of Nature Management, Ulan-Ude, Russian Federation), A. Stefanyuk (Nikolaev Institute of Inorganic Chemistry, Novosibirsk State Technical University, Novosibirsk, Russian Federation), V. Makotchenko (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), A. Berdinsky (Novosibirsk State Technical University, Novosibirsk, Russian Federation), A. Romanenko (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), V. Burdukovskii (Bailak Institute of Nature Management, Ulan-Ude, Russian Federation), V. Fedorov (Nikolaev Institute of Inorganic Chemistry, Novosibirsk State University, Novosibirsk, Russian Federation)
Piezoresistive Effect in Composite Films Based on Polybenzimidazole and Few-Layered Graphene 
The paper reports experimental study of piezoresistive effect in composite films based on polybenzimidazole and few-layered graphene. Colloidal dispersions of few-layered graphene were obtained by ultrasonic treatment of few-layered graphene in the solution of poly[2,2’-(p-oxydiphenylen)-5,5’-bisbenzimidazole] (OPBI) in N-methyl-2-pyrrolidone (NMP). Electroconductive films were formed from the dispersions by flow coating, filler content being less than 1 mass percent. To investigate dependence of electrical resistance on mechanical strain strips of the films were glued onto beams of uniform strength (in bending) with cyanoacrylate adhesive, the beams being insulated with polymer glue. The strain gauge factors were measured for two films with different resistivities. Electrical resistances were measured by two- and four-point methods, the factors being independent on the method used. The factors are similar within the error for both films and equal to 20.5.
3.H. Funk (University of Stuttgart, Stuttgart, Germany), J. Ng (University of California Los Angeles, Los Angeles, United States), N. Kamimura (Nagoya University, Nagoya, Japan), Y. Xie (University of California Los Angeles, Los Angeles, United States), J. Schulze (University of Stuttgart, Stuttgart, Germany)
Local Growth of Graphene on Cu and Cu0.88Ni0.12 Foil Substrates 
A method for large single-grain Graphene growth on a Cu:Ni-alloy using a local precursor feeding setup has been reported. Using back-end of line integration devices exploiting the high mobility and good mechanical properties can be built. However, few details about the actual local feeding setup and the yield are known. A local precursor feeding setup was implemented using a conventional tube-furnace, modified to allow local precursor feeding. Ar-diluted CH4 as the C precursor was fed through a quartz-nozzle, placed above the growth substrate. The influence of different growth-parameters was studied. Precursor flowrate, background-pressure, substrate material and nozzle-substrate distance were optimized for the experimental setup used. Local growth of poly-crystalline Graphene was achieved for small substrate-nozzle distance (2 mm) near atmospheric pressure (86.5 hPa) for low precursor flowrates (5 cm3⋅min-1). Local growth on both Cu and Cu:Ni is possible for these optimized parameters. Local Graphene growth yield was found to be low. A possible explanation for the dependencies based on the fluid mechanics inside the furnace was found. An implementation of the local feeding setup was presented. Important parameters were optimized to allow local Graphene growth. Dependencies were studied to gain a better understanding of the local feeding growth mechanism.
4.J. Schlipf (University of Stuttgart, Stuttgart, Germany), J. Frieiro (University of Vigo, Vigo, Spain), I. Fischer (University of Stuttgart, Stuttgart, Germany), C. Serra (University of Vigo, Vigo, Spain), J. Schulze (University of Stuttgart, Stuttgart, Germany), S. Chiussi (University of Vigo, Vigo, Spain)
Growth of Patterned GeSn and GePb Alloys by Pulsed Laser Induced Epitaxy 
While modulators, waveguides and detectors have been successfully integrated in Si devices, a laser source still remains a challenge. Unfortunately, in Si and Ge, indirect band transitions are favored, making stimulated emission unlikely. Direct bandgap transition has recently been demonstrated in Ge by introducing tensile strain with heavy doping or by alloying with Sn. GePb seems to be a promising candidate here as well, since the required Pb concentration is predicted to be far lower than for Sn. We examine the influence of SiO2 hard masks on the formation of GeSn and GePb by Pulsed Laser Induced Epitaxy, a method allowing for fast processing and in-situ monitoring. Main objectives are to study the spatial distribution of the elements, strain distribution, and possible underetching of Ge after mask removal. Sn or Pb was deposited on an epitaxial Ge layer on Si, patterned with a SiO2 hard mask, by thermal evaporation. The patterns were then irradiated with ArF excimer laser pulses of 193 nm to induce melting and resolidification, aligned to the crystal structure of the Si(100) substrate below. Extensive characterization was performed, mainly focused on Atomic Force Microscopy and Raman Spectroscopy, examining the fabrication quality and thus the feasibility of future integrated laser devices.
5.D. Weisshaupt (University of Stuttgart, Stuttgart, Germany), P. Jahandar, G. Colston, P. Allred (University of Warwick, Warwick, United Kingdom), J. Schulze (University of Stuttgart, Stuttgart, Germany), M. Myronov (University of Warwick, Warwick, United Kingdom)
Impact of Sn Segregation on Ge1-xSnx Epi-layers Growth by RP-CVD 
This work investigates the impact of Sn segregation on the growth of Ge1-xSnx epi-layers using a reduced pressure chemical vapour deposition (RP-CVD) system with the common precursors Ge2H6 and SnCl4. The investigated samples were grown on top of a 1 µm thick relaxed Ge buffer layer with different amounts of Sn incorporation, achieved by increasing the SnCl4 partial pressure. The grown Ge1-xSnx epi-layers themselves are fully strained with respect to the Ge buffer underneath. A range of advanced analytical techniques have been used to characterize the material properties. The crystal structure, quality and thickness of the Ge1-xSnx epi-layers were analysed by using cross-sectional high resolution transmission electron microscopy, high resolution X-ray diffraction and fourier transform infrared spectrometry. Atomic force microscopy and Scanning electron microscopy in combination with energy dispersive X-ray spectroscopy are used for analysing the surface. It is shown that simply increasing the SnCl4 partial pressure is insufficient for achieving Sn contents beyond ~8%. Above these concentrations the epitaxial growth breaks down due to the segregation of Sn resulting in the formation of dots on the epilayer surface, which consist of pure Sn.
6.L. Haenel (University of Stuttgart, Stuttgart, Germany), G. Alsharif, S. Baldock, N. Halcovitch, O. Kolosov (Lancaster University, Lancaster, United Kingdom), M. Oehme (University of Stuttgart, Stuttgart, Germany), A. Robson, J. Spiece (Lancaster University, Lancaster, United Kingdom), J. Schulze (University of Stuttgart, Stuttgart, Germany)
Thermal Induced Phase Separation in Pseudomorphically Grown GeSn Alloys (guest paper) 
In recent years, investigation on possibly direct group-IV materials-systems such as Germanium-Tin (GeSn) has been gaining interest. As already known, a critical thickness depending on the Sn content exists that limits the growth of single-crystalline GeSn films with high Sn concentrations by using molecular beam epitaxy (MBE) and therefore the use of these films as active materials in opto-electronic devices. One hypothesis is the self-heating of the films during MBE growth destroying the crystal quality by reaching a certain temperature. This work investigates on the crystal quality of metastable GeSn layers on Ge virtual substrates with 10 % Sn content and varying thicknesses after MBE growth and after different annealing steps. Beam-exit cross-sectional polishing was used to form high-quality-cross sections of the layers of interest to enable scanning electron microscopy, atomic-force microscopy, scanning spreading resistance microscopy (SSRM) and scanning thermal microscopy not only of the surfaces but also of the bulk material as a function of thickness and annealing temperature. Features of different sizes depending on the polishing duration were observed that are assumed to highlight crystal defects while SSRM visualizes the different electrical properties of the layers. Furthermore, energy dispersive X-ray spectroscopy and X-ray diffraction were performed.
7.V. Kuznetsov (Nikolaev Institute of Inorganic Chemistry, Novosibirsk State Technical University, Novosibirsk, Russian Federation), A. Ledneva, S. Artemkina, M. Kozlova, G. Yakovleva (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), A. Berdinsky (Novosibirsk State Technical University, Novosibirsk, Russian Federation), A. Romanenko (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), V. Fedorov (Nikolaev Institute of Inorganic Chemistry, Novosibirsk State University, Novosibirsk, Russian Federation)
Tungsten Dichalcogenides as Possible Gas-Sensing Elements 
Possible application of tungsten dichalcogenides as gas-sensing elements is discussed in this paper. The experimental results on sensitivity of pristine and niobium doped WS2 and WSe2 to acetone and ethanol gases are presented. Polycrystalline powder specimens were obtained by high temperature solid-state synthesis from the stoichiometric mixture of pure elements. Two types of samples were studied: 1) tablets pressed at 1.5 GPa to form bulk samples and 2) thin films prepared from 35% ethanol-water colloidal dispersions by their filtration onto membrane filters (pore diameter is 20 nm). The electrical resistances of the samples were shown to be increased in the presence of ethanol and acetone gases at room temperature, thereby revealing positive response to reducing gases.
8.S. Mouetsi, F. Zouach, D. Rechem (Department of electrical engineering, faculty of sciences and applied sciences, University Larbi Ben, Oum El Bouaghi, Algeria)
Flicker noise in AlGaAs/GaAs of High Electron Mobility Heterostructure Field-Effect Transistor at Cryogenic Temperature 
- In this paper, Low frequency noise measurements at cryogenic temperature below 120 K in AlGaAs/GaAs of high electron mobility heterostructure field-effect transistor (HFET) was studied. In this range of temperature, the samples are biased at very low voltage to avoid velocity saturation. Assuming that the different noise sources of power noise spectral density such as flicker noise (1/f), generation–recombination (G-R) noise, thermal noise are independent. In this work, the parameters characterizing flicker noise (γ, αH) are studied, noting that γ varies around the unity and αH decreases with increasing temperature for the lowest temperature range from 4 to 70 K. Taking into account the effect of bidimensional electron gas (2DEG) mobility at low temperatures, the obtained results allow us to suggest that the predominant model of the flicker noise at cryogenic temperature is the fluctuation mobility model.
9.E. Rolseth, A. Blech, I. Fischer, Y. Hashad, R. Koerner, K. Kostecki, A. Kruglov, V. Senthil Srinivasan, M. Weiser (University of Stuttgart, Stuttgart, Germany), T. Wendav, K. Busch (Humboldt University Berlin, Berlin, Germany), J. Schulze (University of Stuttgart, Stuttgart, Germany)
Device Performance Tuning of Ge Gate-all-Around Tunneling Field Effect Transistors by Means of GeSn: Potential and Challenges 
We report experimental results on the fabrication and characterization of vertical Ge gate-all-around p-channel tunneling field effect transistors, utilizing GeSn as channel material. Through two sample series, the potential and challenges of implementing the low-band gap material GeSn are reviewed. It is verified that the on-current ION can be effectively enhanced by increasing the Sn-content in the GeSn-channel, due to increasing tunneling probabilities. However, the lowering of the band gap and the degradation of the epitaxial quality that come with increasing Sn content heavily influence off-currents IOFF and the subthreshold swing of the devices as a consequence of trap-assisted tunneling. It is found that when limited to a 10 nm δ-layer, Ge0.96Sn0.04 is most beneficial for ION when positioned inside the channel as opposed to in the source, with a maximum of ION = 180 µA/µm at VDS = 2 V and VG = 4 V. The enhanced leakage currents (IOFF) pose key challenges to implementing GeSn in tunneling field-effect transistors and we discuss possible strategies for device improvement.
10.S. Krivec, M. Poljak, T. Suligoj (Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Band-Structure of Ultra-Thin InGaAs Channels: Impact of Biaxial Strain and Thickness Scaling 
In this paper, the InGaAs band-structure is calculated using a nearest neighbor sp3d5s* tight binding approach to asses the impact of compressive and tensile biaxial strain on effective in-plane masses, non-parabolicity factor, and conduction band minimum (CBM) shift down to channel thicknesses of 4 nm. The reported results show that the effective mass increases with body thickness decrease, whereas it decreases with the strain increase from compressive to tensile. Furthermore, the difference between the position of pinned Fermi level and CBM increases with strain. The impact of band-structure effects on electron transport is demonstrated on InGaAs-OI structure. The extracted band-structure parameters provide electron mobility results consistent with experiments. Our calculations makes it possible to asses electron mobility in the wide range of both compressive and tensile strain and body thicknesses from 15 nm down to 4 nm.
11.T. Knežević (University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, Croatia), L. Nanver (University of Twente, Faculty of Electrical Engineering Mathematics & Computer Science, Enschede, Netherlands), T. Suligoj (University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Perimeter Effects from Interfaces in Ultra-Thin Layers Deposited on Nanometer-Deep p+n Silicon Junctions 
Interface states at metal-semiconductor or semiconductor-semiconductor interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions that are contacted by metal, can be beneficial for suppressing the injection of majority carriers from the bulk. The effect is more pronounced as the p+n junction depth becomes smaller and it dominates electrical characteristics in the ultrashallow junctions, such as in sub-10-nm deep pure boron (PureB) diodes. The properties of the perimeter of such an interface play a critical role in the overall electrical characteristics. In this paper, a TCAD simulation study is performed on nanometer-deep p+n junctions, where an interface hole-layer forms an energy barrier at the semiconductor-semiconductor interface. The suppression of the bulk electron injection is analyzed with respect to the barrier height and the p+n junction depth. Perimeter effects are investigated by 2D simulations showing a detrimental impact on the parasitic majority carrier injection from the bulk in the structures with nanometer deep p+n junctions. Other than employing a guard ring, the reduction of the perimeter effects by shifting the position of the metal electrode is considered.
12.J. Žilak, M. Koričić, T. Suligoj (University of Zagreb, Faculty of electrical engineering and computing, Zagreb, Croatia)
Analysis of Hot Carrier-Induced Degradation of Horizontal Current Bipolar Transistor 
The relative contribution of the hot electrons and hot holes to the reliability degradation of the Horizontal Current Bipolar Transistor (HCBT) is investigated by TCAD simulations. The current gain (beta) degradation, obtained by the reverse-bias emitter-base (EB) and mixed-mode stress measurements, is caused by a hot carrier-induced interface trap generation at silicon-oxide interfaces above and below HCBT's emitter n+ polysilicon region. The simulation analysis is performed on the HCBT structures with different n-collector doping profiles and n-hill silicon sidewall surface treatment. The used lucky electron injection model distinguishes the hot carrier type responsible for the damage and makes it possible to predict the HCBT reliability behavior. It is shown that the majority of traps under the reverse-bias EB stress is located at the top interface and is caused by the hot holes, whereas the hot electrons produce the traps under the mixed-mode stress, located mostly at the bottom interface.
13.M. Koričić, J. Žilak, T. Suligoj (Fakultet elektrotehnike i računarstva, Zagreb, Croatia)
Impact of the Local p-well Substrate Parameters on the Electrical Performance of the Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor 
Dependence of the electrical characteristics of the Double-Emitter Reduced-Surface Field Horizontal Current Bipolar Transistor on the geometrical parameters and possible lithography mask misalignment are investigated by the device simulations. Breakdown voltage mechanisms are explained and trade-off between common-emitter breakdown voltage and the cutoff frequency is analyzed.
Thursday, 5/25/2017 3:00 PM - 7:00 PM,
Bellavista, Grand hotel Adriatic, Opatija
3:00 PM - 7:00 PM  
Invited Lecture
 
R. Surdeanu (NXP Semiconductors, Leuven, Belgium)
Secure Connections for a Smarter World 
In recent years, the mobile device revolution has transformed our world into a world where everything is connected, everything is smart, and everything is (or should be) secure. Today 2.9 billion people are online, 40% of the world’s population. By 2020 we expect about 50 billion connected devices to be on the market. Connected devices do deliver clear benefits – but they also increase the risk of data manipulation, data theft and cyberattack. In 2015, European enterprises had at least a 1 in 5 chance of losing data through a targeted cyberattack. Even more serious: there is a severe risk that the European economy is falling behind in exploiting the opportunities of emerging IoT markets. The lack of trust by businesses and consumers in smart, connected devices is a barrier to growth and jobs. Can technology help in offering trusted solutions for the IoT world?
Papers
 
1.I. Brezovec, M. Magerl (Sveučilište u Zagrebu, Zagreb, Croatia), J. Mikulic, G. Schatzberger (ams AG, Graz, Austria), A. Baric (Sveučilište u Zagrebu, Zagreb, Croatia)
Characterization of Measurement System for High-Precision Oscillator Measurements 
Temperature stability of a high-precision oscillator is characterized by measurements in temperature chamber. Two time constants are measured for a given temperature of the chamber: (i) time required for the silicon to reach the steady-state temperature obtained by measuring the time-domain voltage response of the on-chip temperature sensor, and (ii) time required for the oscillator circuit to reach the steady-state frequency obtained by measuring the oscillator frequency in the time-domain. The temperature probe for measuring the chamber temperature is characterized in terms of its response to a step in temperature.The noise performance of the measurement system is characterized based on Allan deviation.
2.J. Mikulić (ams AG, Premstaetten, Austria), I. Brezovec, M. Magerl (FER, Zagreb, Croatia), G. Schatzberger (ams AG, Premstaetten, Austria), A. Barić (FER, Zagreb, Croatia)
Temperature Calibration of an On-Chip Relaxation Oscillator 
This work investigates the calibration procedure of a conventional relaxation oscillator. First, the numerical analysis is performed in MATLAB in order to evaluate the sensitivity of the procedure to the noise generated inside the chip and measurement system. Next, the theory is experimentally verified by calibrating four test chip samples designed and manufactured in ams 0.35-μm CMOS technology. The test chips are calibrated with two different test methods: the first method measures the output frequency in the entire temperature range from -40 to 150 °C during 12 hours; the second method measures the output frequency from 30 to 60 °C during 30 seconds. The proposed calibration methods exhibit the reduction of the frequency error by 18x and 8x, having the total post-calibration precision of ±0.1 % and ±0.22 %, respectively.
3.V. Valchev, O. Stanchev (Technical University of Varna, Varna, Bulgaria), G. Nikolov (IDT Bulgaria Ltd., Varna, Bulgaria)
Model of High-Efficiency High-Current Coupled Inductor Two-Phase Buck Converter 
This paper proposes a study and design considerations on a high-current high-efficiency two-phase buck converter with a coupled inductor. The converter operates close to the megahertz range. A specialized simulation model of the considered two-phase buck converter is proposed. The model allows an evaluation of current and voltage ripples at various duty cycles and inductor coupling factors. It can facilitate the design and tuning of such DC-DC converters. The model is implemented into a general-purpose simulation environment. The simulation results are presented and analyzed. The model is verified trough a dedicated experiment on a realized converter. Although coupled inductors increase the power converter efficiency, for high-current buck converter this effect is substantial at duty cycle bigger than 40 %. The advantages at lower duty cycle are related to the output voltage ripple and feedback response time. Design considerations are derived based on the analyzed simulation and experimental results of the investigated two-phase buck converter.
4.D. Bundalo (Faculty of Philosophy, University of Banja Luka, Banja Luka, Bosnia and Herzegovina), Z. Bundalo (Faculty of Electrical Engineering, University of Banja Luka, Banja Luka, Bosnia and Herzegovina), D. Pasalic (Sberbank A.D., Banja Luka, Bosnia and Herzegovina), B. Cvijic (Lanaco d.o.o, Banja Luka, Bosnia and Herzegovina)
Analog to Digital Signal Converters for BiCMOS Quaternary Digital Systems 
Possibilities of practical design and implementation of analog signal to quaternary digital signal converters for application in BiCMOS quaternary digital circuits and systems are considered, proposed and described in the paper. General approaches and general structure for implementation and design of parallel analog to quaternary digital signal BiCMOS converters are proposed and described. Then, two digit parallel analog to quaternary digital signal BiCMOS converters are proposed and described as the illustration of proposed way for the converters design and implementation. More possibilities of the design and implementation are considered and described. Two types of such converters are described in more details: the powerful type converters and the simple type converters. Given solutions have been analyzed by computer simulations. All descriptions and considerations have been confirmed by computer simulations. Some of the computer simulation results are given in the paper.
5.L. Šneler, M. Herceg, T. Matić (Faculty of electrical engineering, computer science and information technology , Osijek, Croatia)
Ultra-Wideband Pulse Generator for Time-Encoding Wireless Transmission 
The paper presents implementation of the Ultra-Wideband (UWB) pulse generator suitable for wireless transmission of time-encoded pulse train. Application of the UWB pulse generator enables direct pulsed triggering from the output of Time Encoding Machine (TEM). The pulse generator circuit is designed in IHP 0.24 μm SG25H3 technology. The paper presents simulation results for the pulse power spectral density and time domain results for the corresponding input and output signals. The pulse generator circuit consumes 189 pJ energy per transmitted pulse and covers area of 0.132 mm2. Output pulse width is equal to 301 ns and output voltage swing 502 mV.
6.A. Miloš, G. Molnar (Ericsson Nikola Tesla d. d., Zagreb, Croatia), M. Vučić (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Spectral-Efficient UWB Pulse Shapers Generating Gaussian and Modified Hermitian Monocycles 
Ultra-wideband (UWB) impulse radio uses very short pulses whose spectra are regularized by Federal Communications Commission (FCC). One technique to obtain these pulses is shaping. The shaping is realized with a bandpass filter called pulse shaper. Its impulse response approximates an FCC-compliant waveform. In this paper, we propose spectral-efficient shapers whose responses approximate high-order Gaussian and modified Hermitian monocycles. To obtain the optimum shapers, we use least-squares error criterion. Furthermore, for various orders of monocycles, we provide the transfer functions that exhibit high spectral efficiency. Within the FCC UWB passband, the transfer functions of the Gaussian shapers ensure the spectral efficiency up to 89%, whereas the functions of the modified-Hermitian shapers provide the efficiency up to 62%.
7.G. Molnar, A. Dudarin (Ericsson Nikola Tesla d. d., Zagreb, Croatia), M. Vučić (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Design of Multiplierless CIC Compensators Based on Maximum Passband Deviation 
Cascaded-integrator-comb (CIC) decimation filters are the simplest multiplierless filters supporting high sample rate conversion factors. However, the magnitude response of high order CIC filters exhibits a high passband droop. Such a droop can be reduced by connecting an FIR compensator in the cascade with the CIC filter. In this paper, we present a method for the design of CIC compensators whose coefficients are expressed as a sum of powers of two (SPT). The method is based on the minimization of the difference between the maximum and the minimum passband amplitude. To obtain the compensator coefficients, we use a global optimization technique, which is based on the interval analysis. In the optimization, the number of SPT terms for each coefficient is specified. The compensators obtained efficiently compensate narrow and wide passbands by using three and five coefficients having small number of SPT terms. For these compensators, multiplierless structures are provided.
8.N. Nikolov (TU Varna, Bulgaria, Bulgaria), M. Aleksandrova, V. Valchev, O. Stanchev (TU Varna, Varna, Bulgaria)
Adaptive State Observer Development Using Recursive Extended Least-Squares Method  
In this paper is presented a recursive algorithm for adaptive observation of linear single-input single-output (SISO) time-invariant discrete systems. The problem of state observation is of main importance in automatic control especially for designing modal state controllers when the state variables of the system are unknown. The proposed algorithm is based on the recursive extended least-squares (RELS) method. The adaptive state observer estimates system parameters, initial and current state vector by using the measured input and output system signals. In order to prove the algorithm workability experiments in the Matlab environment are provided.
9.V. Valchev (Technical University of Varna, Varna, Bulgaria), D. Mareva, D. Yudov (Bourgas Free University, Bourgas, Bulgaria), R. Stoyanov (Technical University of Varna, Varna, Bulgaria)
Inverter Current Source for Pulse-Arc Welding with Improved Parameters 
The feature of power current sources for pulse-arc welding is superimposing of current pulses with a defined shape, size and frequency on the main welding current. Under the influence of pulsating current exceeding the critical current for melting, drops of a certain size are formed. Simultaneously a high-frequency control (the transfer of the metal) and a low frequency one (for control of the formation of cavity) are performed to obtain so called "double pulse". The purpose of this paper is to explore the possibilities to control the parameters of superimposed pulses by a particular welding inverter current source with improved parameters. The current pulse superimposed to the basic current has a duration of 1,5 ÷ 3,0 μs and is realized by an additional source. The operation and the characteristics of the scheme are investigated by simulations (PSPICE) under various modes and loads. Depending on the type and diameter of the electrode, a frequency of 4 to 2000 Hz is applied. The formation and separation of the drop from the end of the electrode is controlled by the amplitude and duration of the pulse current. Thus, the average welding current can be significantly reduced. Dependencies of the parameters of pulses on specific components of scheme are derived. Recommendations are made to improve the performance and utilization of the circuit elements and the technological process.Design considerations are presented to optimize the parameters of the transformer.
10.V. Valchev, P. Yankov (Technical University of Varna, Varna, Bulgaria), A. Van den Bossche ( Ghent University, Department of Electrical Energy, Systems and Automation, Ghent, Belgium)
Power Output Comparison of Three Phase Passive Converter Circuits for Wind Driven Generators 
The paper presents a performance comparison of two variations of a three phase passive converter circuit for wind driven generators included in patent PCT/EP2010/055637. A brief description of the concept is presented. Then along with the simulation of the basic circuit, already described in previous research, an improved schematic with added magnetizing inductors is proposed and investigated. A methodology for adjustment of the power/frequency curve of both circuits is added. A design approach for dimensioning the components at 100kW power output rating of the wind turbine generator is developed. The OrCAD Capture computer software is used for the simulations of both analog circuits. A graphical comparison of their power/frequency curves is realized in order to assess increase or decrease in power at the range of 15 Hz ÷ 65 Hz. The difference between the two curves is also expressed as percentages in the last column of the table. Considerations are derived to optimize the design of the magnetic components in the circuit. Finally a conclusion is made about the need of a more complex design to achieve higher output results.
Friday, 5/26/2017 9:00 AM - 12:00 PM,
Bellavista, Grand hotel Adriatic, Opatija
9:00 AM - 12:00 PMPapers 
1.E. Emanović, D. Jurišić (Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Dynamic range optimization and noise reduction by low-sensitivity, fourth-order, band-pass filters using coupled general-purpose biquads 
In this paper we compare two realizations of fourth-order band-pass filter sections: first is realized as a coupled structure, having negative feedback around two Biquadratic sections in cascade (CO), second is a common design of two Biquadratic sections in cascade (CA). Dynamic range optimization by equating opamp output voltage levels using signal-flow graph is presented for a single second-order GP-Biquad and for a fourth-order coupled Biquads. The reduction of sensitivity and noise is already well-known for the case of CO BP filter, with identical Biquads, when compared to the CA design. In this paper it is shown that equating opamp output voltage levels reduces output noise even more. In that way dynamic range is improved substantially. Because we use a general-purpose (GP) Biquad using two-integrators, we can use its simple tuning features and simple design; design equations are given. Sensitivity and output thermal noise are simulated using circuit analysis program Pspice.
2.W. Brenner, N. Adamovic (TU Wien, Vienna, Austria)
A Circular Economy for Photovoltaic Waste - the Vision of the European Project CABRISS 
The main vision of the H2020 Project CABRISS http://www.spire2030.eu/cabriss is to develop a circular economy mainly for the photovoltaic, but also for electronic and glass industry. It will consist in the implementation of: (i) recycling technologies to recover In, Ag and Si for the sustainable PV technology and other applications; (ii) a solar cell processing roadmap, which will use Si waste for the high throughput, cost-effective manufacturing of hybrid Si based solar cells and aims at demonstrating the re-usability and recyclability at the end of life of key PV materials. CABRISS is inline with the European directive WEEE (Waste Electrical and Electronic Equipment Directive) which became effective on 14 February 2014. WEEE tightens the rules on the collection and treatment of e-waste and now also includes photovoltaic panels. CABRISS from the begin contributes to European standardization in the field of specific requirements for the treatment of photovoltaic panels . Si solar cells developed within CABRISS will have a low environmental impact by the implementation of low carbon footprint Technologies. The project bundles different sectors like the Powder Metallurgy (fabrication of Si powder based low cost substrate), the PV industry (innovative PV Cells) and the industry of recycling (hydrometallurgy and pyrometallurgy).
3.M. Caria, J. Schudrowitz, A. Jukan (TU Braunschweig, Braunschweig, Germany), N. Kemper (Stiftung Tier¨arztliche Hochschule Hannover, Hannover, Germany)
Smart Farm Computing Systems for Animal Welfare Monitoring 
Smart sensing and computing have become important concepts in the last few years, creating opportunities in the new sector of smart agriculture. A few commercial smart agriculture systems have been introduced to this end, and albeit closed for experimentation, are paving the way for high-tech innovations for crop and livestock agriculture. In this paper, we focus on open and low-cost concepts for smart fog (edge) computing systems to create a smart farm animal welfare monitoring system. We develop an open source system that enables networking and computing of edge devices but also processing of data inaserver–allbeingaconnectedsystemthatwerefer to as smart farm computing system. We propose to use Raspberry Pis as edge devices to monitor the animals andthefarmenvironment,andwelettheedgedevices communicate with a local farm controller. The proposed farm computing system conceptually creates a fog computing layer and is further connected with cloud computing systems and a mobile application. We demonstrate that a low-cost and open computing and sensing system can effectively monitor multiple parameters related to animal welfare.
4.D. Vinko (Faculty of Electrical Engineering, Computer Science and Information Technology Osijek, Osijek, Croatia)
Power Management Circuit for Energy Harvesting Applications with Zero-Power Charging Phase  
Energy harvesting systems are becoming an exciting alternative for powering low-power electronics. The main drawback is the low instantaneous power they can provide. For applications where real time response is not mandatory, energy harvesting systems can also be used with electronic devices whose power demand exceeds available power. In such applications, energy provided by energy harvester is collected and stored, commonly on a capacitor. When the amount of collected energy is sufficient, it is used to power a given electronic device for a desired time interval. Hence, it operates in two phases: charging and discharging phase. For switching between these two operating phases a power management circuit is used. This paper proposes power management circuit with zero power consumption during charging phase. The proposed design of a power management circuit is evaluated through measurements on a developed prototype. Circuit is compared with other power management circuit designs. Proposed solution has faster response time, wider range of supported output currents and lower level-of-complexity.
5.M. Marcelić, R. Malarić (Fakultet elektrotehnike i računarstva, Zagreb, Croatia)
System for Early Condensation Detection and Prevention in Residential Buildings 
In this paper a system is described that measures the indoor relative humidity and temperature of a room, outdoors relative humidity and temperature and the temperature of the interior wall in the coldest part of the wall. Moisture and temperature sensors will be used for measurements, and for measurement system and processing the Programmable Wireless Stamp (PWS) employed. The data will be viewed through an LCD display. Out of the measured data, the following information will be calculated: indoor and outdoor dew point temperature and their difference, indoor and outdoor humidity and their ratio and the difference between the wall temperature and indoor dew point. This data will also offer corresponding warnings, advice and instructions. The system will consist out of a central inner unit with a display which will measure the indoor humidity and room and wall temperature, and out of an outdoor weatherproof unit which will measure the outside humidity and temperature. The system will be used for early detection and prevention of condensation on walls and its consequences.
6.M. Dadić, K. Petrović, R. Malarić (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
FEM Analysis and Design of a Voltage Instrument Transformer for Digital Sampling Wattmeter 
A voltage instrument transformer (VIT) or a voltage divider is needed if a National instruments PXI 4461 Dynamic Signal Analyzer is used in a digital sampling wattmeter application. They assure that the input voltage is lowered to the allowed level of the acquisition card, and VIT also gives the galvanic isolation. This paper discusses possible types of sectionalized windings of a VIT with primary and secondary interleave, which result in lower leakage inductances. On the basis of a detailed finite element method (FEM) analysis, a prototype VIT is designed and produced. The ratio error and the phase angle error are measured on the prototype using a digital calibrator, digital multimeter (DMM) and a phase-angle meter. As well, the performance of the transformer over the wider frequency bandwidth and under the harmonically rich excitation is experimentally investigated.
7.T. Tuncer (Firat University, Elazig, Turkey), E. Avaroğlu (Mersin University, Mersin, Turkey)
Random Number Generation with LFSR Based Stream Cipher Algorithms  
Random numbers have a wide range of usage area such as simulation, games of chance, sampling and computer science (cryptography, game programming, data transmission). In order to use random numbers in computer science, they must have three basic requirements. First, the numbers generated must be unpredictable. Second, the numbers generated should have good statistical properties. Finally, the generated number streams must not be reproduced. Random number generators (RNGs) have been developed to obtain random numbers with these properties. These random number generators are classified into true random number generators (TRNG) and pseudo random number generators (PRNG). One of the PRNGs used for generate random numbers is Stream Encryption algorithms. In this paper, random number generation of LFSR based stream encryption algorithms and their hardware implementations are presented. LFSR based stream encryption algorithms have been implemented on Altera’s FPGA based 60-nm EP4CE115F29C7 development boards by using VHDL language. The obtained random numbers passed the NIST statistical tests, accepted as standard for cryptographic applications.
8.A. Rjabov (Tallinn University of Technology, Tallinn, Estonia), V. Sklyarov, I. Skliarova (University of Aveiro, Aveiro, Portugal), A. Sudnitson (Tallinn University of Technology, Tallinn, Estonia)
RAM-based Mergers for Data Sort and Frequent Item Computation 
Data sorting and frequent item computation are important tasks in data processing. The paper suggests an architecture for parallel data sorting with simultaneous counting of every item frequency. The architecture is designed for streaming data and incorporates data sorting in hardware, merging of preliminary sorted blocks with compressing of repeated items with calculating of repetitions in hardware, and merging large subsets received from the hardware in general-purpose software. Hardware merge components of this architecture count and compress repeated items in sorted subsets in order to reduce merging time and prepare the data for frequent item computation. The results of experiments clearly demonstrate advantages of the proposed architectures.
 

Basic information:
Chairs:

Marko Koričić (Croatia), Željko Butković (Croatia), Petar Biljanović (Croatia)

Steering Committee:

Slavko Amon (Slovenia), Dubravko Babić (Croatia), Maurizio Ferrari (Italy), Mile Ivanda (Croatia), Branimir Pejčinović (United States), Tomislav Suligoj (Croatia), Aleksandar Szabo (Croatia)

International Program Committee Chairman:

Petar Biljanović (Croatia)

International Program Committee:

Slavko Amon (Slovenia), Vesna Anđelić (Croatia), Michael E. Auer (Austria), Dubravko Babić (Croatia), Snježana Babić (Croatia), Almir Badnjevic (Bosnia and Herzegovina), Mirta Baranović (Croatia), Bartosz Bebel (Poland), Ladjel Bellatreche (France), Eugen Brenner (Austria), Gianpiero Brunetti (Italy), Andrea Budin (Croatia), Željko Butković (Croatia), Željka Car (Croatia), Matjaž Colnarič (Slovenia), Alfredo Cuzzocrea (Italy), Marina Čičin-Šain (Croatia), Marko Čupić (Croatia), Marko Delimar (Croatia), Todd Eavis (Canada), Maurizio Ferrari (Italy), Bekim Fetaji (Macedonia), Renato Filjar (Croatia), Tihana Galinac Grbac (Croatia), Paolo Garza (Italy), Liljana Gavrilovska (Macedonia), Matteo Golfarelli (Italy), Stjepan Golubić (Croatia), Francesco Gregoretti (Italy), Stjepan Groš (Croatia), Niko Guid (Slovenia), Jaak Henno (Estonia), Ladislav Hluchy (Slovakia), Vlasta Hudek (Croatia), Željko Hutinski (Croatia), Mile Ivanda (Croatia), Hannu Jaakkola (Finland), Leonardo Jelenković (Croatia), Dragan Jevtić (Croatia), Robert Jones (Switzerland), Peter Kacsuk (Hungary), Aneta Karaivanova (Bulgaria), Marko Koričić (Croatia), Tomislav Kosanović (Croatia), Mladen Mauher (Croatia), Igor Mekjavic (Slovenia), Branko Mikac (Croatia), Veljko Milutinović (Serbia), Nikola Mišković (Croatia), Vladimir Mrvoš (Croatia), Jadranko F. Novak (Croatia), Jesus Pardillo (Spain), Nikola Pavešić (Slovenia), Vladimir Peršić (Croatia), Slobodan Ribarić (Croatia), Janez Rozman (Slovenia), Karolj Skala (Croatia), Ivanka Sluganović (Croatia), Mario Spremić (Croatia), Vlado Sruk (Croatia), Stefano Stafisso (Italy), Uroš Stanič (Slovenia), Ninoslav Stojadinović (Serbia), Mateo Stupičić (Croatia), Jadranka Šunde (Australia), Aleksandar Szabo (Croatia), Laszlo Szirmay-Kalos (Hungary), Dina Šimunić (Croatia), Zoran Šimunić (Croatia), Dejan Škvorc (Croatia), Antonio Teixeira (Portugal), Edvard Tijan (Croatia), A Min Tjoa (Austria), Roman Trobec (Slovenia), Sergio Uran (Croatia), Tibor Vámos (Hungary), Mladen Varga (Croatia), Marijana Vidas-Bubanja (Serbia), Mihaela Vranić (Croatia), Boris Vrdoljak (Croatia), Damjan Zazula (Slovenia)

Registration / Fees:
REGISTRATION / FEES
Price in EUR
Before 8 May 2017
After 8 May 2017
Members of MIPRO and IEEE
180
200
Students (undergraduate and graduate), primary and secondary school teachers
100
110
Others
200
220

The discount doesn't apply to PhD students.

Contact:

Marko Koričić
University of Zagreb
Faculty of Electrical Engineering and Computing
Unska 3
HR-10000 Zagreb, Croatia

Phone: +385 1 6129 671
GSM: +385 98 671 391
Fax: +385 1 6129 653
E-mail: marko.koricic@fer.hr

The best papers will get a special award.
Accepted papers will be published in the ISBN registered conference proceedings. Papers presented at the Conference will be submitted for posting to IEEE Xplore.
There is a possibility that the selected scientific papers with some further modification and refinement are being published in the Journal of Computing and Information Technology (CIT).


International Program Committee General Chair:

Petar Biljanović (Croatia)

International Program Committee:

Slavko Amon (Slovenia), Vesna Anđelić (Croatia), Michael E. Auer (Austria), Dubravko Babić (Croatia), Snježana Babić (Croatia), Almir Badnjevic (Bosnia and Herzegovina), Mirta Baranović (Croatia), Bartosz Bebel (Poland), Ladjel Bellatreche (France), Eugen Brenner (Austria), Gianpiero Brunetti (Italy), Andrea Budin (Croatia), Željko Butković (Croatia), Željka Car (Croatia), Matjaž Colnarič (Slovenia), Alfredo Cuzzocrea (Italy), Marina Čičin-Šain (Croatia), Marko Čupić (Croatia), Marko Delimar (Croatia), Todd Eavis (Canada), Maurizio Ferrari (Italy), Bekim Fetaji (Macedonia), Renato Filjar (Croatia), Tihana Galinac Grbac (Croatia), Paolo Garza (Italy), Liljana Gavrilovska (Macedonia), Matteo Golfarelli (Italy), Stjepan Golubić (Croatia), Francesco Gregoretti (Italy), Stjepan Groš (Croatia), Niko Guid (Slovenia), Jaak Henno (Estonia), Ladislav Hluchy (Slovakia), Vlasta Hudek (Croatia), Željko Hutinski (Croatia), Mile Ivanda (Croatia), Hannu Jaakkola (Finland), Leonardo Jelenković (Croatia), Dragan Jevtić (Croatia), Robert Jones (Switzerland), Peter Kacsuk (Hungary), Aneta Karaivanova (Bulgaria), Marko Koričić (Croatia), Tomislav Kosanović (Croatia), Mladen Mauher (Croatia), Igor Mekjavic (Slovenia), Branko Mikac (Croatia), Veljko Milutinović (Serbia), Nikola Mišković (Croatia), Vladimir Mrvoš (Croatia), Jadranko F. Novak (Croatia), Jesus Pardillo (Spain), Nikola Pavešić (Slovenia), Vladimir Peršić (Croatia), Slobodan Ribarić (Croatia), Janez Rozman (Slovenia), Karolj Skala (Croatia), Ivanka Sluganović (Croatia), Mario Spremić (Croatia), Vlado Sruk (Croatia), Stefano Stafisso (Italy), Uroš Stanič (Slovenia), Ninoslav Stojadinović (Serbia), Mateo Stupičić (Croatia), Jadranka Šunde (Australia), Aleksandar Szabo (Croatia), Laszlo Szirmay-Kalos (Hungary), Dina Šimunić (Croatia), Zoran Šimunić (Croatia), Dejan Škvorc (Croatia), Antonio Teixeira (Portugal), Edvard Tijan (Croatia), A Min Tjoa (Austria), Roman Trobec (Slovenia), Sergio Uran (Croatia), Tibor Vámos (Hungary), Mladen Varga (Croatia), Marijana Vidas-Bubanja (Serbia), Mihaela Vranić (Croatia), Boris Vrdoljak (Croatia), Damjan Zazula (Slovenia)

Location:

Opatija, with its 170 years long tourist tradition, is the leading seaside resort of the Eastern Adriatic and one of the most famous tourist destinations on the Mediterranean. With its aristocratic architecture and style Opatija has been attracting renowned artists, politicians, kings, scientists, sportsmen as well as business people, bankers, managers for more than 170 years. 

The tourist offering of Opatija includes a vast number of hotels, excellent restaurants, entertainment venues, art festivals, superb modern and classical music concerts, beaches and swimming pools and is able to provide the perfect response to all demands.

Opatija, the Queen of the Adriatic, is also one of the most prominent congress cities on the Mediterranean, particularly important for its international ICT conventions MIPRO that have been held in Opatija since 1979 gathering more than a thousand participants from more than forty countries. These conventions promote Opatija as the most desirable technological, business, educational and scientific center in Southeast Europe and the European Union in general.


For more details please look at www.opatija.hr/ and www.visitopatija.com.

 

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