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Presented papers written in English and published in the Conference proceedings will be submitted for posting to IEEE Xplore.

Event program
Thursday, 6/2/2016 9:00 AM - 1:00 PM,
Bellavista, Grand hotel Adriatic, Opatija
Chair: Marko Koričić (Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia) 
Invited Paper 
I. Fischer (University of Stuttgart, Stuttgart, Germany), F. Oliveira (University of Minho, Braga, Portugal), A. Benedetti, S. Chiussi (University de Vigo, Vigo, Spain), J. Schulze (University of Stuttgart, Stuttgart, Germany)
(Si)GeSn Nanostructures for Optoelectronic Device Applications 
We present an overview of recent results on the fabrication of GeSn- and SiGeSn-nanostructures for optoelectronic device application.
Regular Papers 
1.G. Yakovleva, A. Romanenko (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), A. Berdinsky (Novosibirsk State Technical University, Novosibirsk, Russian Federation), A. Ledneva (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), V. Kuznetsov (Novosibirsk State Technical University, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), M. Han, S. Kim (Ewha Womans University, Seoul, South Korea), V. Fedorov (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation)
Thermoelectric Properties of Polycrystalline WS2 and Solid Solutions of WS2-ySey Types 
Transition metal chalcogenides are perspective thermoelectric materials which have a great interest for application. In this work, the polycrystalline bulk WS2 and solid solutions WS2-ySey types have been studied. In contrast to the literature data obtained at higher temperatures, we have investigated the thermoelectric properties of these materials at low and middle temperatures (77-450K). The temperature dependences of electrical conductivity and Seebeck coefficient were received from experimental data. The Seebeck coefficients of these materials have a high values, the maximum value up to 2000µV/K has been obtained.
2.V. Kuznetsov (Novosibirsk State Technical University, Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), A. Romanenko (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation), A. Berdinsky (Novosibirsk State Technical University, Novosibirsk, Russian Federation), A. Ledneva, S. Artemkina, V. Fedorov (Nikolaev Institute of Inorganic Chemistry, Novosibirsk, Russian Federation)
Piezoresistive Effect in Polycrystalline Bulk and Film Layered Sulphide W0.95Re0.05S2 
The paper reports the results of an experimental investigation of electron transport properties and piezoresistive effect of polycrystalline film and bulk samples of tungsten-rhenium disulphide W0.95Re0.05S2. Polycrystalline powder of the composition was synthesized by direct high temperature reaction of elements with stoichiometric ration. The film samples were prepared by ultrasonication of the powder in 35% ethanol with subsequent spraying of the colloidal dispersion onto preheated substrates. The bulk samples were formed by conventional compress technology at a pressure of 1.25 GPa. The strain gauge factor is equal to 13 and 19 for film and bulk samples, respectively. The band gaps were estimated from temperature dependences of conductivity to be about 360 and 470 meV, respectively.
3.V. Rumyantseva (Moscow Technological University, Moscow, Russian Federation), I. Shilov (Kotel’nikov Institute of Radioengineering and Electronics RAS, Fryazino, Moscow region, Russian Federation), Y. Alekseev (State Scientific Center of Laser Medicine, Moscow, Russian Federation), A. Gorshkova (Moscow Technological University, Moscow, Russian Federation)
Luminescent Diagnostics in the NIR-Region on a Base of Yb-Porphyrin Complexes 
The problem of early diagnostics, necessary for successful therapy of oncological diseases, is well known. In this field an optical diagnostic methods are the most effective. The optical response of a luminescent label can indicate the condition of biological tissues and biochemical processes occurring in them in real time. The most promising luminescent labels for non-invasive diagnostics are those that absorb and emit light in the NIR-region (~700-1100 nm), where the biological tissues absorption and auto-fluorescence are minimal. One of the most promising studied by us label is Yb-complex of 2,4-dimethoxyhematoporhyrin IX, it possess the optimum chemical and photophysical properties such as a tumorotropic, a high molar extinction coefficient, a large Stokes shift, an effective luminescence, chemical and light stability and an ability to be used in aqueous media. Therefore, a special attention is given to luminescent diagnostics method development for endoscopic and visually available cancer forms on a base of Yb-complex of 2,4-dimethoxyhematoporhyrin IX and laser-fiber NIR-range fluorimeter.
4.V. Tudić, N. Posavec (Karlovac University of Applied Sciences, Karlovac, Croatia)
Simulation Study of the Composite Silicon Solar Cell Efficiency Sensitivity to the Absorption Coefficients and the Thickness of Intrinsic Absorber Layer 
In this paper, two silicon solar cells p+-ii-n+ with homogenous and heterogeneous intrinsic absorber layers based on hydrogenated amorphous-nanocrystalline-microcrystalline silicon (a-Si:H/nc-Si:H/µc-Si:H) have been studied by computer modeling and simulation program (AMPS-1D - Analysis of Microelectronic and Photonic Structures). Various factors that affect cell efficiency performance have been studied such as layers absorption coefficients, band gap and layer thickness up to 1200nm. It was found that in the case of standard solar cell conditions a layers absorption coefficient has a major contribution to solar cell performance according to measurement on the actual solar cell samples. It is demonstrated that, for homogenous a-Si:H/nc-Si:H intrinsic absorber layer with constant crystal fraction of Xc=30% cell efficiency is higher than in case of heterogeneous intrinsic absorber layer which contains various crystal fractions depending of absorber layer thickness. Second case scenario of silicon thin film composite structure is more common in solar cells production by using PECVD and HWCVD deposition techniques which is proven by X-ray diffraction and high resolution electron microscopy measurements.
5.M. Čović, V. Gradišnik, Ž. Jeričević (Engineering Faculty, RIJEKA, Croatia)
The Investigation of Influence of Localized States on a-Si:H p-i-n Photodiode Transient Response to Blue Light Impulse with Blue Light Optical Bias 
The series of experiments measuring the transient response of a-Si:H pin photodiode to light impulses superimposed to constant light (optical bias dependence of modulated photocurrent method - OBMPC) of the same wavelength (430 nm) and various reverse voltages on photodiode was performed in order to characterize localized states of the energy gap of amorphous silicon and their influence on photocurrent degradation. The responses were analyzed as a sum of decaying exponential functions using the least squares method and a generalized Fosse's algorithm. This type of response is typical for independent relaxation processes running at the same time. Experiments and subsequent data processing illustrate feasibility of the method and results for the transient response of a-Si:H pin photodiode. The results strongly suggest two energy levels between 0.32 eV and 0.45 eV. These results were obtained applying the optical ac blue and dc blue bias light in a low frequency regime.
6.T. Knežević, T. Suligoj (Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Analysis of Electrical and Optical Characteristics of InP/InGaAs Avalanche Photodiodes in Linear Regime by a New Simulation Environment 
The linear characteristics of the InP/InGaAs avalanche detectors are modeled and numerically analyzed by developing a new TCAD-based simulation environment. Temperature dependency of the impact ionization coefficients in InP are fitted for 200 K to 300 K temperature range. Adjustment of the model parameters for the simulations of the dark current sources in InP and InGaAs materials is performed in the same temperature range. Optical constants of the InGaAs material used in the layer stack are fitted to account for the absorption in the material for a range of wavelengths between 0.9 and 1.7 μm. Dark current and I-V characteristics under illumination are simulated and analyzed. Impact of the operating temperature on responsivity, breakdown voltage and dark current are analyzed. Excess noise factor is also calculated. Process simulations of Zn diffusion into InP are included in the TCAD simulator and the impact of the real diffusion profiles on the diode characteristics are assessed. The dark current for the structure with diffused Zn p+ region decreases by a factor of 1.7 compared to the structure with box-like constant concentration p+ region extracted at operating temperature of 200 K at 90% of VBR.
7.I. Berdalović, Ž. Osrečki, F. Šegmanović (Faculty of Electrical Engineering and Computing, Zagreb, Croatia), D. Grubišić (Laser Components DG, Inc., Tempe, United States), T. Knežević, T. Suligoj (Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Design of Passive-Quenching Active-Reset Circuit with Adjustable Hold-Off Time for Single-Photon Avalanche Diodes 
Single-photon avalanche diodes (SPADs) are gaining popularity in applications where low intensity light needs to be detected. Since they are used in Geiger mode, where the self-sustaining avalanche needs to be quenched, an important part of the detection circuitry is the quenching circuit. First, we examine the operation of a basic passive quenching circuit consisting of the SPAD and two series resistors and measure the SPAD’s dark count rate. Then we implement a passive quenching circuit with active reset (PQAR). Without a sufficiently long hold-off time between quenching and reset the circuit does not operate properly. Because of that, a hold-off time is introduced by means of an adjustable time delay circuit. The behavior of the PQAR circuit for different hold-off times is then examined, and the minimum hold-off time of 1 μs, which still allows for correct operation with the given circuitry is determined. Finally, a comparison is made between the passive and the PQAR circuit, focusing on the advantages of active over passive reset.
8.J. Žilak, M. Koričić (University of Zagreb, FER, Zagreb, Croatia), H. Mochizuki, S. Morita (Asahi Kasei Microdevices Corp., Nobeoka, Miyazaki, Japan), T. Suligoj (University of Zagreb, FER, Zagreb, Croatia)
Impact of the Emitter Polysilicon Thickness on the Performance of High-Linearity Mixers with Horizontal Current Bipolar Transistors  
The impact of the emitter polysilicon etching in Tetramethyl Ammonium Hydroxide (TMAH) on the characteristics of high-linearity mixers fabricated with the low-cost Horizontal Current Bipolar Transistor (HCBT) is analyzed. During emitter formation, the thick layer of %-Si is deposited over the whole wafer, which is then etched-back in the TMAH. The emitter thickness depends on the TMAH etching time and impacts the HCBT's electrical characteristics. Active down-converting mixers with opencollector topology based on Gilbert cell are fabricated with two types of HCBTs with different TMAH etching time using the lowest-cost HCBT technology with CMOS n-well region for n-collector. Measurements of mixers' characteristics are done on-wafer by using the multi-contact probes. The mixers achieve maximum IIP3 of 20.2 dBm and conversion gain of 4 dB. Differences in performance characteristics between two mixer types are small indicating that HCBT's circuit performance sensitivity on the emitter thickness variations is relatively small.
9.M. Koričić, J. Žilak (Faculty of Electrical Engineering and Computing, Zagreb, Croatia), H. Mochizuki, S. Morita (Asahi Kasei Microdevices Corp., Nobeoka, Japan), T. Suligoj (Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Fully-integrated Voltage Controlled Oscillator in Low-cost HCBT Technology 
Design of cross-coupled voltage controlled oscillator in low-cost HCBT technology is presented. Beside the low-complexity front-end devices, only 2 metal layers are used and the passives are implemented in the available on-chip structures. Varactors are fabricated as pn-junctions by using the ion implantation from the technology. Symmetric inductors are fabricated by using the topmost metal layer. Since only 2 aluminum metal layers are available, small thickness of the aluminum layer and proximity of the silicon substrate limit the inductor quality factor. Varactor and inductor models for circuit simulations are developed by using the device and electromagnetic simulations, respectively, and are compared to measured characteristics of fabricated devices.
Thursday, 6/2/2016 3:00 PM - 7:00 PM,
Bellavista, Grand hotel Adriatic, Opatija
Chair: Adrijan Barić (Faculty of Electrical Engineering and Computing, University of Zagreb, Croatia) 
Regular Papers  
1.D. Arbet, M. Kováč, L. Nagy, V. Stopjaková, M. Šovčík (Faculty of Electrical Engineering and Information Technlogy, Institute of Electronics and Photonics, Bratislava, Slovakia)
Variable-Gain Amplifier for Ultra-Low Voltage Applications in 130nm CMOS Technology 
The paper deals with design and analysis of a variable-gain amplifier (VGA) working with a very low supply voltage, which is targeted for low-power applications. The proposed amplifier was designed using the bulk-driven approach, which is suitable for ultra-low voltage circuits. Since the power supply voltage is less than 0.6 V, there is no risk of latchup that is usually the main drawback of bulk-driven topologies. The proposed VGA was designed in 130 nm CMOS technology with the supply voltage of 0.4 V. The achieved results indicate that gain of the designed VGA can be varied from 0 dB to 18 dB. Therefore, it can be effectively used in the many applications such as automatic gain control loop with ultra-low value of supply voltage, where the dynamic range is the important parameter.
2.J. Mikulic, G. Schatzberger (ams AG, Graz, Austria), A. Baric (University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Relaxation Oscillator Calibration Technique with Comparator Delay Regulation 
This paper presents an improved technique for the calibration of the relaxation oscillators with respect to the delay of the comparators. The drawbacks of the conventional topology for the relaxation oscillators are analyzed. Based on the analysis, the circuit modification which resolves the effects of the comparator delay in the trimming procedure is proposed. The simulations in ams 0.18μ CMOS technology exhibit more than 5x the improvement in the precision compared to the conventional topology, evaluated in the temperature range from -40 to 125 ○C.
3.N. Mitrovic, R. Enne, H. Zimmermann (Vienna University of Technology, Vienna, Austria)
A Bootstrap Circuit for DC-DC Converters with a Wide Input Voltage Range in HV-CMOS 
Bootstrap circuits are essential parts of integrated DC-DC converters with an NMOS transistor as high-side switch, which provide voltage overdrive for gate drivers. This paper presents a bootstrap circuit which doesn’t need an additional supply voltage for charging the bootstrap capacitor to a desired voltage level, but uses the input voltage of the converter. Other advantages of this circuit are proper operation over a wide range of duty ratios and input voltages (7.5 V to 45 V). The circuit is designed in 0.18 µm 50 V high-voltage (HV) CMOS technology as part of a buck DC-DC converter for a high output power. Post layout simulations show a voltage dip lower than 80 mV when the high-side NMOS transistor is on and the power consumption of the bootstrap circuit equal to 160 mW for nominal conditions (input voltage 36 V, duty ratio 15%, bootstrap voltage 4.8 V, input power of drivers 115 mW). The layout dimensions of the bootstrap circuit are 96 µm x 251 µm.
4.N. Markulic, K. Raczkowski, P. Wambacq, J. Craninckx (imec, Leuven, Belgium)
A Fractional-N Subsampling PLL based on a Digital-to-Time Converter 
The paper presents a subsampling PLL which uses a 10-bit, 0.5 ps unit step Digital-to-Time Converter (DTC) in the phase-error comparison path for the fractional-N lock. The gain and nonlinearity of the DTC can be digitally calibrated in the background while the PLL operates normally. During fractional multiplication of a 40 MHz reference to frequencies around 10 GHz, the measured jitter is in the range from 176 to 198 fs. The worst measured fractional spur is -57 dBc and the in-band phase noise performance of the PLL is −108 dBc/Hz. The presented analog PLL in advanced 28 nm CMOS achieves a figure-of-merit (FOM) of -246.6 dB that compares well to the recent state-of-the-art.
5.F. Hormot, J. Bačmaga, A. Barić (Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Infrared Protection System for High-Voltage Testing of SiC and GaN FETs used in DC-DC Converters 
This technical paper presents the student project on design and testing of the protection system for evaluation of the operation of SiC and GaN semiconductor switches used in high-voltage switching DC-DC converters. The high-voltage testing area is protected from invading by an array of infrared (IR) emitters and detectors. Whenever an object passes through the IR protective space, a high-voltage DC source is being disconnected from its power supply and harmful effects of high DC voltage are avoided. The functionality of the developed system is tested and its characteristic response timings are measured.
6.K. Martinčić (Tehničko veleučilište, Zagreb, Croatia)
Optimal Conduction Angle of an E-PHEMT Harmonic Frequency Multiplier 
This paper describes a classic method of an analog harmonic multiplier which uses a C class amplifier topology. The goal of this work is to propose the method of finding the optimal conduction angle of a E-pHEMT transistor so that a better spectral purity of the second or third harmonics can be obtained. MATLAB simulations are performed and the electronic circuit with an E-pHEMT transistor is designed. Measurements are made in both time and frequency domain and a comparison of the results is presented.
7.T. Matić, M. Herceg, J. Job, L. Šneler (Faculty of Electrical Engineering Osijek, Osijek, Croatia)
Ultra-Wideband Transmitter Based on Integral Pulse Frequency Modulator 
The paper presents a novel short-range wireless sensor node architecture, based on Integral Pulse Frequency Modulator (IPFM) and Ultra-Wideband (UWB) pulse generator. Due to the lack of internal clock signal source and multi user implementation without application of a microprocessor, the architecture is simple and energy efficient. Multi-user coding is performed using delay elements, where each user has unique delay time value. The output of the IPFM is fed to the delay element. Delayed and original signal from the IAFM are feeding UWB pulse generator. The paper presents the transmitter architecture and measurements of the transmitter signals in time and frequency domain.
8.A. Bandiziol (University of Udine, Udine, Italy), W. Grollitsch, F. Brandonisio, R. Nonis (Infineon Technology, Villach, Austria), P. Palestri (University of Udine, Udine, Italy)
Design of a Transmitter for High-Speed Serial Interfaces in Automotive Micro-Controller 
This work reports about the system level design of a transmitter for the next generation of High-Speed Serial Interfaces (HSSI) to be implemented in a micro-controller for automotive Electronic Control Unit (ECU) applications, pushing the transmission speed up to 10 Gbps over a 10cm long cable. A voltage mode architecture is selected for low power considerations. We focus our analysis here on the system-level implementation of Feed-Forward Equalization as an FIR filter consisting of different transmitter slices driven by different bits in the data sequence. We consider different data rates and number of taps and analyze how the performance of the equalizer is affected by the quantization of the values of the taps in the practical implementation of the FIR filter.
9.A. Geraskin, A. Savin, I. Nakrap (Saratov State University, Saratov, Russian Federation), V. Meschanov (Yuri Gagarin State Technical University of Saratov, Saratov, Russian Federation)
Application of the Calculation-Experimental Method in the Design of Microwave Filters 
The estimation of the applicability of calculation-experimental method to optimize the design of microstrip microwave filters on the example of the band-pass filter on the half-wave resonators with Chebyshev characteristic. This method is based on an iterative process of the correction of the result designed device parameters synthesis in his experimental output characteristics. It is shown that the method allows to consider the influence of various factors relating to the manufacturing process and features of the materials used. However, an additive method of accounting in the target function of deviations from given output characteristics does not provide a rapid convergence process at large deviations. In order to increase the efficiency of calculation - experimental optimization method is offered its modification, consisting in additional correction parameters of materials and mathematical models of components of the experimental output characteristics of the device. Accounting irregularities of the relative dielectric permittivity and the thickness of the microstrip filter components in its design with the help of a modified method has allowed for a single iteration to reduce the unevenness of the reflection coefficient module of the filter with 7.1 dB to 1.7 dB.
10.G. Molnar, A. Dudarin (Ericsson Nikola Tesla d.d., Zagreb, Croatia), M. Vucic (University of Zagreb, Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Minimax Design of Multiplierless Sharpened CIC Filters Based on Interval Analysis 
Polynomial sharpening of amplitude responses of cascaded-integrator-comb (CIC) filters is often used to improve folding-band attenuations. The design of sharpened CIC (SCIC) filters is based on searching the polynomial coefficients ensuring required magnitude response. Several design methods have been developed, resulting in real, integer, and sum-of-powers-of-two (SPT) coefficients. The latter are preferable since they result in multiplierless structures. In this paper, we present a method for the design of SCIC filters with SPT polynomial coefficients by using the minimax error criterion in folding bands. To obtain the coefficients, we use a global optimization technique based on the interval analysis. The features of the presented method are illustrated with the design of wideband SCIC filters.
11.R. Blecic (FER, Zagreb, Croatia), Q. Diduck (Ballistic Devices Inc, Santa Clara, United States), A. Baric (FER, Zagreb, Croatia)
Minimization of Maximum Electric Field in High-Voltage Parallel-Plate Capacitor 
Minimization of maximum electric field of a parallel-plate capacitor for high-voltage and temperature stable applications is presented. Cubic zirconia is used as a dielectric material because of its high relative permittivity, high dielectric strength and high temperature stability. The maximum electric field present in the structure limits the maximum achievable capacitance of the capacitor structure. Reducing the maximum electric field of the capacitor allows to reduce the thickness of the dielectric material, which increases its capacitance. The impact of geometrical and electrical parameters of the parallel-plate capacitor on the maximum electric field is analyzed by a 2D multiphysics solver. The guidelines for the minimization of the maximum electric field are given.
12.R. Mišlov, M. Magerl (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia), S. Fratte-Sumper, B. Weiss, C. Stockreiter (ams AG, Graz, Austria), A. Barić (University of Zagreb Faculty of Electrical Engineering and Computing, Zagreb, Croatia)
Modelling SMD Capacitors by Measurements 
The lumped models of several capacitors in SMD-0603 package are extracted from S-parameter measurements. The S-parameters of the SMD components are obtained: (i) by modelling the RF connector and transmission lines and de-embedding, and (ii) by directly calibrating the reference plane to the SMD component using on-board calibration standards. The extracted parasitics related to the SMD component package are compared for capacitors of different nominal values and for the two calibration methods in the frequency range up to 8 GHz.
Friday, 6/3/2016 9:00 AM - 1:00 PM,
Bellavista, Grand hotel Adriatic, Opatija
Chair: Davor Vinko (Faculty of Electrical Engineering, Josip Juraj Strossmayer University of Osijek, Croatia) 
Regular Papers 
1.D. Vinko, P. Oršolić (Faculty of Electrical Engineering Osijek, Osijek, Croatia)
Impact of Capacitor Dielectric Type on the Performance of Wireless Power Transfer System 
In loosely coupled wireless power transfer systems, the efficiency is directly affected by the quality factor of the resonant LC tank in both the transmitter and the receiver. This paper studies the impact that the capacitor dielectric type has on the quality factor of the resonant LC tank. Experimental investigation is conducted for low ESR capacitor types and the performance of the wireless power transfer system is evaluated. Focus of the experimental evaluation is placed on the receivers end, i.e. the evaluated parameters are current-voltage characteristics of the receiver and maximal power values. Capacitors are also compared with respect to their ESR values on different frequencies and price. The results show that the capacitor type has a significant impact on the performance of wireless power transfer system. The correct choice of capacitor type can increase the efficiency of power transfer and the maximal achievable power up to 400 %.
2.A. Kumar A, R. R (LBS College of Engineering and Technology, Thiruvananthapuram, India)
Switching Speed and Stress Analysis for Fixed-fixed Beam Based Shunt Capacitive RF MEMS Switches 
In this paper, effect of different materials on the reliability of RF MEMS shunt capacitive switch is analyzed. The effective von-Mises stress analysis is done on a fixed-fixed beam switch for materials like Titanium, Platinum, Gold, Aluminium and Copper. The maximum value of von-Mises stress obtained for each material was less than their corresponding ultimate tensile strength. Membrane using Titanium, Copper and Platinum can withstand more number of switching cycles. The variation in switching speed of a fixed-fixed beam structure using Aluminium, Platinum, Titanium, Copper and Gold is also analysed. Membranes using Titanium and Copper give better performance with respect to switching speed and reliability.
3.S. Finny, R. R (LBS College of Engineering and Technology, Thiruvananthapuram, India)
Performance Analysis of Micromirrors - Lift-off and von Mises Stress 
Micromirrors are used in numerous applications such as optical switching, projection displays, biomedical imaging and adaptive optics. In this paper, the structural mechanical properties of an electrostatically controlled square shaped micromirror structure are studied. Lift-off analysis and stress analysis is also conducted and materials which can boost the performance of the micromirror are identified. Higher lift-off is observed for silicon-aluminium structure, but it is not recommended due to severe edge displacement and surface deformation. . Structural steel-aluminium material combination shows maximum lift-off with minimal surface deformation and the maximum value of von Mises stress obtained is less than the yield strength of the material thus ensuring safe operation of the structure. The modeling and analysis are done using COMSOL Multiphysics 4.3b.
4.R. Raj R S, R. R (L B S Institute of Technology for Women, Thiruvananthapuram, India)
Material and Orientation Optimization for Quality Factor Enhancement of BAW Resonators 
In this paper Quality factor of different Bulk Acoustic Wave resonators using various piezoelectric materials are analyzed. Higher the Quality factor, better is the resonator. High Quality factor provides higher signal to noise ratio, higher resolution and low power consumption. The results indicate that Rochelle Salt possess maximum value of Quality factor of about 2999.729. By changing the orientations maximum value of Quality Factor value obtained is about 42696.38 at 81◦. A MEMS based Bulk Acoustic Wave resonator is designed using COMSOL Multiphysics software.
5.G. Horvat, D. Vinko, J. Vlaović (Elektrotehnički Fakultet Osijek, Osijek, Croatia)
Impact of Propagation Medium on Link Quality for Underwater and Underground Sensors 
With the rapid development of wireless networks new application domains are continuously proposed. One of these applications includes an underwater and underground sensor which relies on the properties of diminished RF performance to send the gathered information to a base station. Although many researchers deal with the theoretical background of the channel and propagation models, very few experimental studies regarding the link quality were conducted. Due to the fact that new and more powerful sensor nodes are continuously being developed, the question that arises is how these new and more powerful classes of wireless sensors can handle the harsh environment in underwater and underground networks. Therefore, in this paper the authors analyze the impact of soil, water, moisture and other parameters on the link quality between two sensor nodes in various scenarios. The obtained results present a basis for designing and planning an underground/underwater sensor network.
6.B. Lukovac (Ericsson Nikola Tesla, Zagreb, Croatia), A. Koren, A. Marinčić, D. Šimunić (FER, Zagreb, Croatia)
Electrical Field Intensity Model on the Surface of Human Body for Localization of Wireless Endoscopy Pill  
Constant struggle in medical science to develop new, more advanced methods of medicine application and reducing the invasiveness of a range of tests and procedures is present. For achieving this ambitious goal, it is necessary to find and develop new methods and technologies and to applicate them. The issue of localizing a range of devices inside the human body is one of them. Solution to this problem would enable the upsurge of nanorobots (nanobots) for micro-operations, application of strong medicine on limited areas to lessen its side effects, conducting the nanotoxicology reports or reducing the discomfort of some invasive procedures like endoscopy. In this paper, the focus is on the latter and an example of an endoscopy with a pill is given. Due to maximizing the effectiveness of endoscopy by the use of the pill there is a need for optimizing the technology used for its localization. SEMCAD tool is used in modelling of the scenario and executing the simulations.
7.R. Malaric (FER, Zagreb, Croatia), Z. Martinovic (COMBIS, Zagreb, Croatia), M. Dadic, P. Mostarac (FER, Zagreb, Croatia), Z. Martinovic (Danieli-Systec, Zagreb, Croatia)
Wide Band Current Transducers in Power Measurment Methods - an Overview 
Precise power measurement is usually done at national metrology institutes. In recent years researchers have devoted substantial time toward a measurement of power under non-sinusoidal conditions, especially in power grids because of renewable energy increase. The challenge is not only to measure power at 50 Hz, but also to measure harmonics and inter harmonics. To measure power at needed accuracy, accurate and frequency independent current and voltage transducers are needed up to 100 kHz. In this paper an overview and state of the art is given for current transducers used for this purpose. This mainly includes AC shunts of coaxial design, calculable resistors, precise transformers and methods for their characterization.
8.S. Tusun, I. Erceg, I. Sirotić (Faculty of Electrical Engineering and Computing/Department of Electric Machines, Drives and Automati, Zagreb, Croatia)
Laboratory Model for Design and Verification of Synchronous Generator Excitation Control Algorithms 
This paper presents a laboratory model of synchronous generator excitation system based on National Instruments cRIO real-time industrial controller. It was specially designed for development and verification of classical linear and modern nonlinear excitation control algorithms. Real-time Clarke and Park transformations were implemented on the FPGA for measurements of the generator load angle, voltages and currents in the generator dq-frame. Automatic voltage regulator (AVR) and power system stabilizer (PSS2A) were implemented and experimentally verified on an 83kVA synchronous generator. Tests of step changes for generator voltage and mechanical power references, and test of transmission line disconnection were conducted. Experimental results were compared to simulation results of the designed model in Matlab/Simulink.
9.W. Brenner, N. Adamovic (Vienna University of Technology, Institute of Sensor and Actuator Systems, Vienna, Austria)
The European Project SolarDesign Illustrating the Role of Standardization in the Innovation System 
The Framework Program 7 Project SolarDesign is focused on new photovoltaic (PV) integrated product solutions. To achieve this, new materials, flexible production - and business processes in PV powered product design and architecture had to be developed. Promising markets such as sustainable housing, temporary building structures, outdoor activities, electro-mobility, road lighting and mobile computing drive the demand for decentralized, attractive energy solutions. As products have to respect existing standards SolarDesign from the begin decided to proactively integrate standardization into the project’s efforts. The example PV driven streetlamp demonstrates the influence of standards on performance requirements of the innovative PV materials.
10.D. Rembold, S. Jovalekic (IES, Albstadt, Germany)
Open Public Design Methodology and Design Process 
This paper proposes a design methodology and design process for mechatronic systems incorporating the public community. As a proof of concept, we are building up robot system consisting of the following components: software code files, hardware design files and controller hardware. Every component will be available for review on an open repository and review tool which is GIT/Gerrit. Designers release components into the repository in form of commits. Commits can be downloaded by every community member, examined and reviewed in detail by the public community. At certain time spots we pick a number of commits with positive review results, and review the commits on an overall system perspective. If this review passes, we create a real system from the commits. The steps are: software code compilation, hardware components creation with a 3D printer, controller hardware ordering. Then we build the new robot upon these components. If we can build successfully the robot system (which is expected due to the overall review) and if we are passing all test cases, a new release is created from the picked commits. Every community member can download the latest release for their own usage. The business case for this design methodology and design process, is that we offer to the customer a service to conduct tests from a set of reviewed commits. We provide the resources and the knowledge to this service. We inform the customer about the review and test results and the customer can precede improving the system based on the feedback we provide.
 

Basic information:
Chairs:

Željko Butković (Croatia), Marko Koričić (Croatia), Petar Biljanović (Croatia)

Steering Committee:

Slavko Amon (Slovenia), Dubravko Babić (Croatia), Maurizio Ferrari (Italy), Mile Ivanda (Croatia), Branimir Pejčinović (United States), Tomislav Suligoj (Croatia), Aleksandar Szabo (Croatia)

International Program Committee Chairman:

Petar Biljanović (Croatia)

International Program Committee:

Slavko Amon (Slovenia), Vesna Anđelić (Croatia), Michael E. Auer (Austria), Mirta Baranović (Croatia), Almir Badnjevic (Bosnia and Herzegovina), Bartosz Bebel (Poland), Ladjel Bellatreche (France), Eugen Brenner (Austria), Andrea Budin (Croatia), Željko Butković (Croatia), Željka Car (Croatia), Matjaž Colnarič (Slovenia), Alfredo Cuzzocrea (Italy), Marina Čičin-Šain (Croatia), Marko Delimar (Croatia), Todd Eavis (Canada), Maurizio Ferrari (Italy), Bekim Fetaji (Macedonia), Tihana Galinac Grbac (Croatia), Paolo Garza (Italy), Liljana Gavrilovska (Macedonia), Matteo Golfarelli (Italy), Stjepan Golubić (Croatia), Francesco Gregoretti (Italy), Stjepan Groš (Croatia), Niko Guid (Slovenia), Yike Guo (United Kingdom), Jaak Henno (Estonia), Ladislav Hluchy (Slovakia), Vlasta Hudek (Croatia), Željko Hutinski (Croatia), Mile Ivanda (Croatia), Hannu Jaakkola (Finland), Leonardo Jelenković (Croatia), Dragan Jevtić (Croatia), Robert Jones (Switzerland), Peter Kacsuk (Hungary), Aneta Karaivanova (Bulgaria), Mladen Mauher (Croatia), Igor Mekjavic (Slovenia), Branko Mikac (Croatia), Veljko Milutinović (Serbia), Vladimir Mrvoš (Croatia), Jadranko F. Novak (Croatia), Jesus Pardillo (Spain), Nikola Pavešić (Slovenia), Vladimir Peršić (Croatia), Tomislav Pokrajcic (Croatia), Slobodan Ribarić (Croatia), Janez Rozman (Slovenia), Karolj Skala (Croatia), Ivanka Sluganović (Croatia), Vlado Sruk (Croatia), Uroš Stanič (Slovenia), Ninoslav Stojadinović (Serbia), Jadranka Šunde (Australia), Aleksandar Szabo (Croatia), Laszlo Szirmay-Kalos (Hungary), Davor Šarić (Croatia), Dina Šimunić (Croatia), Zoran Šimunić (Croatia), Dejan Škvorc (Croatia), Antonio Teixeira (Portugal), Edvard Tijan (Croatia), A Min Tjoa (Austria), Roman Trobec (Slovenia), Sergio Uran (Croatia), Tibor Vámos (Hungary), Mladen Varga (Croatia), Marijana Vidas-Bubanja (Serbia), Boris Vrdoljak (Croatia), Damjan Zazula (Slovenia)

Registration / Fees:
REGISTRATION / FEES
Price in EUR
Before May 16, 2016
After May 16, 2016
Members of MIPRO and IEEE
180
200
Students (undergraduate and graduate), primary and secondary school teachers
100
110
Others
200
220

Contact:

Željko Butković
Faculty of Electrical Engineering and Computing
Unska 3
HR-10000 Zagreb, Croatia

Phone: +385 1 6129 924, GSM: +385 98 951 7179
Fax: +385 1 6129 653
E-mail: zeljko.butkovic@fer.hr

Location:

Opatija, with its 170 years long tourist tradition, is the leading seaside resort of the Eastern Adriatic and one of the most famous tourist destinations on the Mediterranean. With its aristocratic architecture and style Opatija has been attracting renowned artists, politicians, kings, scientists, sportsmen as well as business people, bankers, managers for more than 170 years. 

The tourist offering of Opatija includes a vast number of hotels, excellent restaurants, entertainment venues, art festivals, superb modern and classical music concerts, beaches and swimming pools and is able to provide the perfect response to all demands.

Opatija, the Queen of the Adriatic, is also one of the most prominent congress cities on the Mediterranean, particularly important for its international ICT conventions MIPRO that have been held in Opatija since 1979 gathering more than a thousand participants from more than forty countries. These conventions promote Opatija as the most desirable technological, business, educational and scientific center in Southeast Europe and the European Union in general.


For more details please look at www.opatija.hr/ and www.opatija-tourism.hr/.

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